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Heterocontact-Triggered 1H to 1T′ Phase Transition in CVD-Grown Monolayer MoTe2 : Implications for Low Contact Resistance Electronic Devices

Khaustov, Vladislav O. ; Convertino, Domenica ; Köster, Janis ; Zakharov, Alexei A. LU ; Mohn, Michael J. ; Gebeyehu, Zewdu M. ; Martini, Leonardo ; Pace, Simona ; Marini, Giovanni and Calandra, Matteo , et al. (2023) In ACS Applied Nano Materials
Abstract

Single-layer molybdenum ditelluride (MoTe2) has attracted attention due to the smaller energy difference between the semiconducting (1H) and semimetallic (1T′) phases with respect to other two-dimensional transition metal dichalcogenides (TMDs). Understanding the phenomenon of polymorphism between these structural phases is of great fundamental and practical importance. In this paper, we report a 1H to 1T′ phase transition occurring during the chemical vapor deposition (CVD) synthesis of single-layer MoTe2 at 730 °C. The transformation originates at the heterocontact between monoclinic and hexagonal crystals and progresses to either yield a partial or complete 1H to 1T′ phase transition. Microscopic and... (More)

Single-layer molybdenum ditelluride (MoTe2) has attracted attention due to the smaller energy difference between the semiconducting (1H) and semimetallic (1T′) phases with respect to other two-dimensional transition metal dichalcogenides (TMDs). Understanding the phenomenon of polymorphism between these structural phases is of great fundamental and practical importance. In this paper, we report a 1H to 1T′ phase transition occurring during the chemical vapor deposition (CVD) synthesis of single-layer MoTe2 at 730 °C. The transformation originates at the heterocontact between monoclinic and hexagonal crystals and progresses to either yield a partial or complete 1H to 1T′ phase transition. Microscopic and spectroscopic analyses of the MoTe2 crystals reveal the presence of Te vacancies and mirror twin boundaries (MTB) domains in the hexagonal phase. The experimental observations and theoretical simulations indicate that the combination of heterocontact formation and Te vacancies are relevant triggering mechanisms in the observed transformation. By advancing in the understanding and controlling of the direct synthesis of lateral 1T′/1H heterostructures, this work contributes to the development of MoTe2-based electronic and optoelectronic devices with low contact resistance.

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organization
publishing date
type
Contribution to journal
publication status
epub
subject
keywords
CVD, heterocontact, HRTEM, monolayer, MoTe, phase transition, quantum materials
in
ACS Applied Nano Materials
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85164929310
ISSN
2574-0970
DOI
10.1021/acsanm.3c01314
language
English
LU publication?
yes
id
58f44fcb-36ea-4c1a-9700-5b1cd8e3fa8f
date added to LUP
2023-10-06 13:09:05
date last changed
2023-10-06 13:09:05
@article{58f44fcb-36ea-4c1a-9700-5b1cd8e3fa8f,
  abstract     = {{<p>Single-layer molybdenum ditelluride (MoTe<sub>2</sub>) has attracted attention due to the smaller energy difference between the semiconducting (1H) and semimetallic (1T′) phases with respect to other two-dimensional transition metal dichalcogenides (TMDs). Understanding the phenomenon of polymorphism between these structural phases is of great fundamental and practical importance. In this paper, we report a 1H to 1T′ phase transition occurring during the chemical vapor deposition (CVD) synthesis of single-layer MoTe<sub>2</sub> at 730 °C. The transformation originates at the heterocontact between monoclinic and hexagonal crystals and progresses to either yield a partial or complete 1H to 1T′ phase transition. Microscopic and spectroscopic analyses of the MoTe<sub>2</sub> crystals reveal the presence of Te vacancies and mirror twin boundaries (MTB) domains in the hexagonal phase. The experimental observations and theoretical simulations indicate that the combination of heterocontact formation and Te vacancies are relevant triggering mechanisms in the observed transformation. By advancing in the understanding and controlling of the direct synthesis of lateral 1T′/1H heterostructures, this work contributes to the development of MoTe<sub>2</sub>-based electronic and optoelectronic devices with low contact resistance.</p>}},
  author       = {{Khaustov, Vladislav O. and Convertino, Domenica and Köster, Janis and Zakharov, Alexei A. and Mohn, Michael J. and Gebeyehu, Zewdu M. and Martini, Leonardo and Pace, Simona and Marini, Giovanni and Calandra, Matteo and Kaiser, Ute and Forti, Stiven and Coletti, Camilla}},
  issn         = {{2574-0970}},
  keywords     = {{CVD; heterocontact; HRTEM; monolayer; MoTe; phase transition; quantum materials}},
  language     = {{eng}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Applied Nano Materials}},
  title        = {{Heterocontact-Triggered 1H to 1T′ Phase Transition in CVD-Grown Monolayer MoTe<sub>2</sub> : Implications for Low Contact Resistance Electronic Devices}},
  url          = {{http://dx.doi.org/10.1021/acsanm.3c01314}},
  doi          = {{10.1021/acsanm.3c01314}},
  year         = {{2023}},
}