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Temperature dependent self-compensation in Al- and Ga-doped Mg 0.05 Zn 0.95 O thin films grown by pulsed laser deposition

Mavlonov, Abdurashid ; Richter, Steffen LU ; Von Wenckstern, Holger ; Schmidt-Grund, Rüdiger ; Lorenz, Michael and Grundmann, Marius (2016) In Journal of Applied Physics 120(20).
Abstract

We studied the doping efficiency of Al and Ga dopants in (Mg,Zn)O alloys as a function of the growth temperature and post growth annealing times. High-temperature growth results in the highest structural quality and highest electron mobility; the doping efficiency is limited by the dopant's solubility. It was investigated in detail that a low growth temperature is needed to achieve free carrier densities above the solubility limit of the dopants. Samples grown at temperatures of 300 °C and below have a free carrier density significantly above the solubility limit yielding the minimum resistivity of ρmin=4.8×10-4 Ω cm for Mg0.05 Zn0.95O:Al thin films grown on glass at 300 °C. Annealing of these samples reduces the free carrier density... (More)

We studied the doping efficiency of Al and Ga dopants in (Mg,Zn)O alloys as a function of the growth temperature and post growth annealing times. High-temperature growth results in the highest structural quality and highest electron mobility; the doping efficiency is limited by the dopant's solubility. It was investigated in detail that a low growth temperature is needed to achieve free carrier densities above the solubility limit of the dopants. Samples grown at temperatures of 300 °C and below have a free carrier density significantly above the solubility limit yielding the minimum resistivity of ρmin=4.8×10-4 Ω cm for Mg0.05 Zn0.95O:Al thin films grown on glass at 300 °C. Annealing of these samples reduces the free carrier density and the absorption edge to values similar to those of samples grown at high temperatures. The saturation of the free carrier density and the optical bandgap at their high temperature growth/annealing values is explained by the thermal creation of acceptor-like compensating defects in thermodynamic equilibrium.

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author
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publishing date
type
Contribution to journal
publication status
published
in
Journal of Applied Physics
volume
120
issue
20
article number
205703
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85000982117
ISSN
0021-8979
DOI
10.1063/1.4968544
language
English
LU publication?
no
additional info
Publisher Copyright: © 2016 Author(s).
id
59b452f0-6296-4d70-be45-f8001d53eae1
date added to LUP
2022-04-19 14:51:28
date last changed
2022-04-25 16:22:11
@article{59b452f0-6296-4d70-be45-f8001d53eae1,
  abstract     = {{<p>We studied the doping efficiency of Al and Ga dopants in (Mg,Zn)O alloys as a function of the growth temperature and post growth annealing times. High-temperature growth results in the highest structural quality and highest electron mobility; the doping efficiency is limited by the dopant's solubility. It was investigated in detail that a low growth temperature is needed to achieve free carrier densities above the solubility limit of the dopants. Samples grown at temperatures of 300 °C and below have a free carrier density significantly above the solubility limit yielding the minimum resistivity of ρmin=4.8×10-4 Ω cm for Mg0.05 Zn0.95O:Al thin films grown on glass at 300 °C. Annealing of these samples reduces the free carrier density and the absorption edge to values similar to those of samples grown at high temperatures. The saturation of the free carrier density and the optical bandgap at their high temperature growth/annealing values is explained by the thermal creation of acceptor-like compensating defects in thermodynamic equilibrium.</p>}},
  author       = {{Mavlonov, Abdurashid and Richter, Steffen and Von Wenckstern, Holger and Schmidt-Grund, Rüdiger and Lorenz, Michael and Grundmann, Marius}},
  issn         = {{0021-8979}},
  language     = {{eng}},
  month        = {{11}},
  number       = {{20}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Journal of Applied Physics}},
  title        = {{Temperature dependent self-compensation in Al- and Ga-doped Mg 0.05 Zn 0.95 O thin films grown by pulsed laser deposition}},
  url          = {{http://dx.doi.org/10.1063/1.4968544}},
  doi          = {{10.1063/1.4968544}},
  volume       = {{120}},
  year         = {{2016}},
}