Temperature dependent self-compensation in Al- and Ga-doped Mg 0.05 Zn 0.95 O thin films grown by pulsed laser deposition
(2016) In Journal of Applied Physics 120(20).- Abstract
We studied the doping efficiency of Al and Ga dopants in (Mg,Zn)O alloys as a function of the growth temperature and post growth annealing times. High-temperature growth results in the highest structural quality and highest electron mobility; the doping efficiency is limited by the dopant's solubility. It was investigated in detail that a low growth temperature is needed to achieve free carrier densities above the solubility limit of the dopants. Samples grown at temperatures of 300 °C and below have a free carrier density significantly above the solubility limit yielding the minimum resistivity of ρmin=4.8×10-4 Ω cm for Mg0.05 Zn0.95O:Al thin films grown on glass at 300 °C. Annealing of these samples reduces the free carrier density... (More)
We studied the doping efficiency of Al and Ga dopants in (Mg,Zn)O alloys as a function of the growth temperature and post growth annealing times. High-temperature growth results in the highest structural quality and highest electron mobility; the doping efficiency is limited by the dopant's solubility. It was investigated in detail that a low growth temperature is needed to achieve free carrier densities above the solubility limit of the dopants. Samples grown at temperatures of 300 °C and below have a free carrier density significantly above the solubility limit yielding the minimum resistivity of ρmin=4.8×10-4 Ω cm for Mg0.05 Zn0.95O:Al thin films grown on glass at 300 °C. Annealing of these samples reduces the free carrier density and the absorption edge to values similar to those of samples grown at high temperatures. The saturation of the free carrier density and the optical bandgap at their high temperature growth/annealing values is explained by the thermal creation of acceptor-like compensating defects in thermodynamic equilibrium.
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- author
- Mavlonov, Abdurashid ; Richter, Steffen LU ; Von Wenckstern, Holger ; Schmidt-Grund, Rüdiger ; Lorenz, Michael and Grundmann, Marius
- publishing date
- 2016-11-28
- type
- Contribution to journal
- publication status
- published
- in
- Journal of Applied Physics
- volume
- 120
- issue
- 20
- article number
- 205703
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85000982117
- ISSN
- 0021-8979
- DOI
- 10.1063/1.4968544
- language
- English
- LU publication?
- no
- additional info
- Publisher Copyright: © 2016 Author(s).
- id
- 59b452f0-6296-4d70-be45-f8001d53eae1
- date added to LUP
- 2022-04-19 14:51:28
- date last changed
- 2022-04-25 16:22:11
@article{59b452f0-6296-4d70-be45-f8001d53eae1, abstract = {{<p>We studied the doping efficiency of Al and Ga dopants in (Mg,Zn)O alloys as a function of the growth temperature and post growth annealing times. High-temperature growth results in the highest structural quality and highest electron mobility; the doping efficiency is limited by the dopant's solubility. It was investigated in detail that a low growth temperature is needed to achieve free carrier densities above the solubility limit of the dopants. Samples grown at temperatures of 300 °C and below have a free carrier density significantly above the solubility limit yielding the minimum resistivity of ρmin=4.8×10-4 Ω cm for Mg0.05 Zn0.95O:Al thin films grown on glass at 300 °C. Annealing of these samples reduces the free carrier density and the absorption edge to values similar to those of samples grown at high temperatures. The saturation of the free carrier density and the optical bandgap at their high temperature growth/annealing values is explained by the thermal creation of acceptor-like compensating defects in thermodynamic equilibrium.</p>}}, author = {{Mavlonov, Abdurashid and Richter, Steffen and Von Wenckstern, Holger and Schmidt-Grund, Rüdiger and Lorenz, Michael and Grundmann, Marius}}, issn = {{0021-8979}}, language = {{eng}}, month = {{11}}, number = {{20}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Journal of Applied Physics}}, title = {{Temperature dependent self-compensation in Al- and Ga-doped Mg 0.05 Zn 0.95 O thin films grown by pulsed laser deposition}}, url = {{http://dx.doi.org/10.1063/1.4968544}}, doi = {{10.1063/1.4968544}}, volume = {{120}}, year = {{2016}}, }