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A 90-nm CMOS +11dBm IIP3 4mW dual-band LNA for cellular handsets

Fatin, Gholamreza Zare ; Koozehkanani, Z.D. and Sjöland, Henrik LU orcid (2010) In IEEE Microwave and Wireless Components Letters 20(9). p.513-515
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
LNA, amplifiers, Low noise amplifier, CMOS, RF
in
IEEE Microwave and Wireless Components Letters
volume
20
issue
9
pages
513 - 515
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000283244300013
  • scopus:77956393671
ISSN
1531-1309
DOI
10.1109/LMWC.2010.2055839
language
English
LU publication?
yes
id
5b5dbde1-ff88-47ea-a8f5-d20da01b7edb (old id 1625448)
date added to LUP
2016-04-01 13:53:49
date last changed
2024-03-27 11:12:01
@article{5b5dbde1-ff88-47ea-a8f5-d20da01b7edb,
  author       = {{Fatin, Gholamreza Zare and Koozehkanani, Z.D. and Sjöland, Henrik}},
  issn         = {{1531-1309}},
  keywords     = {{LNA; amplifiers; Low noise amplifier; CMOS; RF}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{513--515}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Microwave and Wireless Components Letters}},
  title        = {{A 90-nm CMOS +11dBm IIP3 4mW dual-band LNA for cellular handsets}},
  url          = {{http://dx.doi.org/10.1109/LMWC.2010.2055839}},
  doi          = {{10.1109/LMWC.2010.2055839}},
  volume       = {{20}},
  year         = {{2010}},
}