Donor states in modulation-doped Si/SiGe heterostructures
(2003) In Physical Review B (Condensed Matter and Materials Physics) 68(16: 165338).- Abstract
- We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also the energy width of the resonant states which may appear when a localized state becomes degenerate with the continuous quantum well subbands. The approach is nonvariational, and we are therefore also able to evaluate the wave functions. This is used to calculate the optical absorption spectrum, which is strongly nonisotropic due to the selection rules. The results obtained from calculations for Si/Si1-xGex quantum wells allow us to present the general behavior of the impurity states, as the donor position... (More)
- We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also the energy width of the resonant states which may appear when a localized state becomes degenerate with the continuous quantum well subbands. The approach is nonvariational, and we are therefore also able to evaluate the wave functions. This is used to calculate the optical absorption spectrum, which is strongly nonisotropic due to the selection rules. The results obtained from calculations for Si/Si1-xGex quantum wells allow us to present the general behavior of the impurity states, as the donor position is varied from the center of the well to deep inside the barrier. The influence on the donor ground state from both the central-cell effect and the strain arising from the lattice mismatch is carefully considered. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/294850
- author
- Blom, Anders LU ; Odnoblyudov, MA ; Yassievich, IN and Chao, Koung-An LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 68
- issue
- 16: 165338
- publisher
- American Physical Society
- external identifiers
-
- wos:000186571800069
- scopus:4444316523
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.68.165338
- language
- English
- LU publication?
- yes
- id
- 5f236db9-1df3-4a7c-a3db-b1511a50cb21 (old id 294850)
- date added to LUP
- 2016-04-01 16:57:09
- date last changed
- 2022-04-15 08:09:59
@article{5f236db9-1df3-4a7c-a3db-b1511a50cb21,
abstract = {{We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also the energy width of the resonant states which may appear when a localized state becomes degenerate with the continuous quantum well subbands. The approach is nonvariational, and we are therefore also able to evaluate the wave functions. This is used to calculate the optical absorption spectrum, which is strongly nonisotropic due to the selection rules. The results obtained from calculations for Si/Si1-xGex quantum wells allow us to present the general behavior of the impurity states, as the donor position is varied from the center of the well to deep inside the barrier. The influence on the donor ground state from both the central-cell effect and the strain arising from the lattice mismatch is carefully considered.}},
author = {{Blom, Anders and Odnoblyudov, MA and Yassievich, IN and Chao, Koung-An}},
issn = {{1098-0121}},
language = {{eng}},
number = {{16: 165338}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Donor states in modulation-doped Si/SiGe heterostructures}},
url = {{http://dx.doi.org/10.1103/PhysRevB.68.165338}},
doi = {{10.1103/PhysRevB.68.165338}},
volume = {{68}},
year = {{2003}},
}