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Annealing of ion-irradiated hexagonal boron nitride on Ir(111)

Valerius, Philipp; Herbig, Charlotte; Will, Moritz; Arman, Mohammad A. LU ; Knudsen, Jan LU ; Caciuc, Vasile; Atodiresei, Nicolae and Michely, Thomas (2017) In Physical Review B 96(23).
Abstract

Annealing of a monolayer of hexagonal boron nitride destroyed by Xe ion irradiation gives rise to rich structural phenomena investigated here through a combination of scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron spectroscopy, and density functional theory calculations. We find selective pinning of vacancy clusters at a single specific location within the moiré formed by hexagonal boron nitride (h-BN) and the Ir substrate, crystalline Xe at room temperature of monolayer and bilayer thickness sealed inside h-BN blisters, standalone blisters only bound to the metal at temperatures where boron nitride on Ir(111) decomposes, and finally a pronounced threefold symmetry of all morphological features due... (More)

Annealing of a monolayer of hexagonal boron nitride destroyed by Xe ion irradiation gives rise to rich structural phenomena investigated here through a combination of scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron spectroscopy, and density functional theory calculations. We find selective pinning of vacancy clusters at a single specific location within the moiré formed by hexagonal boron nitride (h-BN) and the Ir substrate, crystalline Xe at room temperature of monolayer and bilayer thickness sealed inside h-BN blisters, standalone blisters only bound to the metal at temperatures where boron nitride on Ir(111) decomposes, and finally a pronounced threefold symmetry of all morphological features due to the preferential formation of boron-terminated zigzag edges that firmly bind to the substrate. The investigations give clear insight into the relevance of the substrate for the damage creation and annealing in a two-dimensional layer material.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B
volume
96
issue
23
publisher
American Physical Society
external identifiers
  • scopus:85039461333
  • wos:000417487200004
ISSN
2469-9950
DOI
10.1103/PhysRevB.96.235410
language
English
LU publication?
yes
id
60024661-2cb3-48ac-bddc-916d603e3771
date added to LUP
2018-01-05 10:48:00
date last changed
2018-08-12 04:41:50
@article{60024661-2cb3-48ac-bddc-916d603e3771,
  abstract     = {<p>Annealing of a monolayer of hexagonal boron nitride destroyed by Xe ion irradiation gives rise to rich structural phenomena investigated here through a combination of scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron spectroscopy, and density functional theory calculations. We find selective pinning of vacancy clusters at a single specific location within the moiré formed by hexagonal boron nitride (h-BN) and the Ir substrate, crystalline Xe at room temperature of monolayer and bilayer thickness sealed inside h-BN blisters, standalone blisters only bound to the metal at temperatures where boron nitride on Ir(111) decomposes, and finally a pronounced threefold symmetry of all morphological features due to the preferential formation of boron-terminated zigzag edges that firmly bind to the substrate. The investigations give clear insight into the relevance of the substrate for the damage creation and annealing in a two-dimensional layer material.</p>},
  articleno    = {235410},
  author       = {Valerius, Philipp and Herbig, Charlotte and Will, Moritz and Arman, Mohammad A. and Knudsen, Jan and Caciuc, Vasile and Atodiresei, Nicolae and Michely, Thomas},
  issn         = {2469-9950},
  language     = {eng},
  month        = {12},
  number       = {23},
  publisher    = {American Physical Society},
  series       = {Physical Review B},
  title        = {Annealing of ion-irradiated hexagonal boron nitride on Ir(111)},
  url          = {http://dx.doi.org/10.1103/PhysRevB.96.235410},
  volume       = {96},
  year         = {2017},
}