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Annealing of ion-irradiated hexagonal boron nitride on Ir(111)

Valerius, Philipp ; Herbig, Charlotte ; Will, Moritz ; Arman, Mohammad A. LU ; Knudsen, Jan LU ; Caciuc, Vasile ; Atodiresei, Nicolae and Michely, Thomas (2017) In Physical Review B 96(23).
Abstract

Annealing of a monolayer of hexagonal boron nitride destroyed by Xe ion irradiation gives rise to rich structural phenomena investigated here through a combination of scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron spectroscopy, and density functional theory calculations. We find selective pinning of vacancy clusters at a single specific location within the moiré formed by hexagonal boron nitride (h-BN) and the Ir substrate, crystalline Xe at room temperature of monolayer and bilayer thickness sealed inside h-BN blisters, standalone blisters only bound to the metal at temperatures where boron nitride on Ir(111) decomposes, and finally a pronounced threefold symmetry of all morphological features due... (More)

Annealing of a monolayer of hexagonal boron nitride destroyed by Xe ion irradiation gives rise to rich structural phenomena investigated here through a combination of scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron spectroscopy, and density functional theory calculations. We find selective pinning of vacancy clusters at a single specific location within the moiré formed by hexagonal boron nitride (h-BN) and the Ir substrate, crystalline Xe at room temperature of monolayer and bilayer thickness sealed inside h-BN blisters, standalone blisters only bound to the metal at temperatures where boron nitride on Ir(111) decomposes, and finally a pronounced threefold symmetry of all morphological features due to the preferential formation of boron-terminated zigzag edges that firmly bind to the substrate. The investigations give clear insight into the relevance of the substrate for the damage creation and annealing in a two-dimensional layer material.

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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B
volume
96
issue
23
article number
235410
publisher
American Physical Society
external identifiers
  • scopus:85039461333
  • wos:000417487200004
ISSN
2469-9950
DOI
10.1103/PhysRevB.96.235410
language
English
LU publication?
yes
id
60024661-2cb3-48ac-bddc-916d603e3771
date added to LUP
2018-01-05 10:48:00
date last changed
2024-07-08 06:18:27
@article{60024661-2cb3-48ac-bddc-916d603e3771,
  abstract     = {{<p>Annealing of a monolayer of hexagonal boron nitride destroyed by Xe ion irradiation gives rise to rich structural phenomena investigated here through a combination of scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron spectroscopy, and density functional theory calculations. We find selective pinning of vacancy clusters at a single specific location within the moiré formed by hexagonal boron nitride (h-BN) and the Ir substrate, crystalline Xe at room temperature of monolayer and bilayer thickness sealed inside h-BN blisters, standalone blisters only bound to the metal at temperatures where boron nitride on Ir(111) decomposes, and finally a pronounced threefold symmetry of all morphological features due to the preferential formation of boron-terminated zigzag edges that firmly bind to the substrate. The investigations give clear insight into the relevance of the substrate for the damage creation and annealing in a two-dimensional layer material.</p>}},
  author       = {{Valerius, Philipp and Herbig, Charlotte and Will, Moritz and Arman, Mohammad A. and Knudsen, Jan and Caciuc, Vasile and Atodiresei, Nicolae and Michely, Thomas}},
  issn         = {{2469-9950}},
  language     = {{eng}},
  month        = {{12}},
  number       = {{23}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B}},
  title        = {{Annealing of ion-irradiated hexagonal boron nitride on Ir(111)}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.96.235410}},
  doi          = {{10.1103/PhysRevB.96.235410}},
  volume       = {{96}},
  year         = {{2017}},
}