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A CMOS power amplifier using ground separation technique

Aniktar, Huseyin ; Sjöland, Henrik LU orcid ; Mikkelsen, Jan and Larsen, Torben (2007) Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems p.281-284
Abstract
This work presents an on-chip ground separation technique for power amplifiers. The ground separation technique is based on separating the grounds of the amplifier stages on the chip and thus any parasitic feedback paths are removed. Simulation and experimental results show that the technique makes the amplifier less sensitive to bondwire inductance, and consequently improves the stability and performance. A two-stage CMOS RF power amplifier for WCDMA mobile phones is designed using the proposed on-chip ground separation technique. The power amplifier is fabricated in a 0.25mum CMOS process. It has a measured 1-dB compression point between 1920MHz and 1980MHz of 21.3plusmn0.5dBm with a maximum PAE of 24%. The amplifier has sufficiently low... (More)
This work presents an on-chip ground separation technique for power amplifiers. The ground separation technique is based on separating the grounds of the amplifier stages on the chip and thus any parasitic feedback paths are removed. Simulation and experimental results show that the technique makes the amplifier less sensitive to bondwire inductance, and consequently improves the stability and performance. A two-stage CMOS RF power amplifier for WCDMA mobile phones is designed using the proposed on-chip ground separation technique. The power amplifier is fabricated in a 0.25mum CMOS process. It has a measured 1-dB compression point between 1920MHz and 1980MHz of 21.3plusmn0.5dBm with a maximum PAE of 24%. The amplifier has sufficiently low ACLR for WCDMA (-33 dB) at an output power of 20 dBm (Less)
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author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
Proceedings of 7th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
pages
281 - 284
conference name
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
conference dates
2007-01-10 - 2007-01-12
external identifiers
  • scopus:34547359879
ISBN
0-7803-9765-7
DOI
10.1109/SMIC.2007.322813
language
English
LU publication?
yes
id
dff9b0a7-599c-4bbf-9ea7-9d163572862a (old id 603138)
date added to LUP
2016-04-04 14:41:34
date last changed
2024-01-04 00:52:54
@inproceedings{dff9b0a7-599c-4bbf-9ea7-9d163572862a,
  abstract     = {{This work presents an on-chip ground separation technique for power amplifiers. The ground separation technique is based on separating the grounds of the amplifier stages on the chip and thus any parasitic feedback paths are removed. Simulation and experimental results show that the technique makes the amplifier less sensitive to bondwire inductance, and consequently improves the stability and performance. A two-stage CMOS RF power amplifier for WCDMA mobile phones is designed using the proposed on-chip ground separation technique. The power amplifier is fabricated in a 0.25mum CMOS process. It has a measured 1-dB compression point between 1920MHz and 1980MHz of 21.3plusmn0.5dBm with a maximum PAE of 24%. The amplifier has sufficiently low ACLR for WCDMA (-33 dB) at an output power of 20 dBm}},
  author       = {{Aniktar, Huseyin and Sjöland, Henrik and Mikkelsen, Jan and Larsen, Torben}},
  booktitle    = {{Proceedings of 7th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems}},
  isbn         = {{0-7803-9765-7}},
  language     = {{eng}},
  pages        = {{281--284}},
  title        = {{A CMOS power amplifier using ground separation technique}},
  url          = {{http://dx.doi.org/10.1109/SMIC.2007.322813}},
  doi          = {{10.1109/SMIC.2007.322813}},
  year         = {{2007}},
}