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850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier

Aniktar, H; Sjöland, Henrik LU ; H, Mikkelsen, J and Larsen, T (2006) In Proceedings of European Microwave Week 2006 p.403-406
Abstract
This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.
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Chapter in Book/Report/Conference proceeding
publication status
published
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in
Proceedings of European Microwave Week 2006
pages
403 - 406
language
English
LU publication?
yes
id
2d1577a2-29e2-4ef8-acc9-7ddc5486a987 (old id 603149)
alternative location
http://ieeexplore.ieee.org/iel5/4057701/4057702/04057835.pdf?tp=&isnumber=&arnumber=4057835
date added to LUP
2007-11-19 13:46:12
date last changed
2016-04-16 10:39:16
@inproceedings{2d1577a2-29e2-4ef8-acc9-7ddc5486a987,
  abstract     = {This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.},
  author       = {Aniktar, H and Sjöland, Henrik and H, Mikkelsen, J and Larsen, T},
  booktitle    = {Proceedings of European Microwave Week 2006},
  language     = {eng},
  pages        = {403--406},
  title        = {850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier},
  year         = {2006},
}