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Optical characterisation of InAs quantum dots grown on {110} cleaved GaAs facets

Gustafsson, Anders LU ; Gerling, M. and Jeppesen, Sören LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Abstract
We have grown InAs quantum dots on the {110} cleaved edges of (001) GaAs wafers. The lattice mismatch drives the formation of the quantum dots in a Stranski-Krastanow growth mode. We have investigated the properties of the resulting structures by atomic force microscopy, scanning electron microscopy, transmission electron microscopy and low-temperature cathodoluminescence. The growth of GaAs on the cleaved edge is characterised by triangular features, similar to fish scales on a micron scale. The InAs forms a wetting-layer on the scales and the quantum dots tend to grow near the edges of the scales. The cathodoluminescence spectra are dominated by two peaks, one from the wetting layer and one from the quantum dots. Monochromatic imaging... (More)
We have grown InAs quantum dots on the {110} cleaved edges of (001) GaAs wafers. The lattice mismatch drives the formation of the quantum dots in a Stranski-Krastanow growth mode. We have investigated the properties of the resulting structures by atomic force microscopy, scanning electron microscopy, transmission electron microscopy and low-temperature cathodoluminescence. The growth of GaAs on the cleaved edge is characterised by triangular features, similar to fish scales on a micron scale. The InAs forms a wetting-layer on the scales and the quantum dots tend to grow near the edges of the scales. The cathodoluminescence spectra are dominated by two peaks, one from the wetting layer and one from the quantum dots. Monochromatic imaging confirms that the quantum dots are located around the edges of the fish scales. Imaging in combination with spot mode spectra reveals that the width of the quantum dot peak comes from a variation in the emission energy of the individual quantum dots (Less)
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organization
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Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
spot mode spectra, GaAs, InAs, emission energy, InAs quantum dots, Optical characterisation, {110} cleaved GaAs facets, (001) GaAs wafer, {110} cleaved edges, lattice mismatch, Stranski-Krastanow growth mode, atomic force microscopy, scanning electron microscopy, transmission electron microscopy, low temperature cathodoluminescence, triangular features, wetting-layer, micron scale, cathodoluminescence spectra, fish scales, wetting layer, monochromatic imaging
in
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
language
English
LU publication?
yes
id
5169ec4b-e27d-402f-bbcd-649912ba5a1c (old id 611490)
date added to LUP
2007-11-27 14:02:58
date last changed
2016-04-16 08:30:13
@inproceedings{5169ec4b-e27d-402f-bbcd-649912ba5a1c,
  abstract     = {We have grown InAs quantum dots on the {110} cleaved edges of (001) GaAs wafers. The lattice mismatch drives the formation of the quantum dots in a Stranski-Krastanow growth mode. We have investigated the properties of the resulting structures by atomic force microscopy, scanning electron microscopy, transmission electron microscopy and low-temperature cathodoluminescence. The growth of GaAs on the cleaved edge is characterised by triangular features, similar to fish scales on a micron scale. The InAs forms a wetting-layer on the scales and the quantum dots tend to grow near the edges of the scales. The cathodoluminescence spectra are dominated by two peaks, one from the wetting layer and one from the quantum dots. Monochromatic imaging confirms that the quantum dots are located around the edges of the fish scales. Imaging in combination with spot mode spectra reveals that the width of the quantum dot peak comes from a variation in the emission energy of the individual quantum dots},
  author       = {Gustafsson, Anders and Gerling, M. and Jeppesen, Sören},
  booktitle    = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  keyword      = {spot mode spectra,GaAs,InAs,emission energy,InAs quantum dots,Optical characterisation,{110} cleaved GaAs facets,(001) GaAs wafer,{110} cleaved edges,lattice mismatch,Stranski-Krastanow growth mode,atomic force microscopy,scanning electron microscopy,transmission electron microscopy,low temperature cathodoluminescence,triangular features,wetting-layer,micron scale,cathodoluminescence spectra,fish scales,wetting layer,monochromatic imaging},
  language     = {eng},
  pages        = {2},
  publisher    = {Lund University},
  title        = {Optical characterisation of InAs quantum dots grown on {110} cleaved GaAs facets},
  year         = {2002},
}