Oxidation and reduction behaviour of Ge/Si islands
(2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)- Abstract
- We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H<sub>2</sub>O in N<sub>2</sub>. The reduction was done in H<sub>2</sub>, which at T<800 °C selectively reduces GeO<sub>2</sub> only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial... (More)
- We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H<sub>2</sub>O in N<sub>2</sub>. The reduction was done in H<sub>2</sub>, which at T<800 °C selectively reduces GeO<sub>2</sub> only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO<sub>2</sub> by Ge, using the reduced Ge dots as the seeds for epitaxy (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/611514
- author
- Zela, Vilma LU ; Sass, T. ; Gustafsson, Anders LU ; Pietzonka, I. and Seifert, Werner LU
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Si, 620 degC, Ge, lateral epitaxial overgrowth, Si substrate, phase segregated Ge enrichments, selective reduction, high resolution transmission electron microscopy, UHV-CVD, dome shaped three dimensional islands, Ge/Si islands, reduction behaviour, oxidation behaviour
- host publication
- 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
- pages
- 2 pages
- publisher
- Lund University
- conference name
- Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
- conference location
- Malmö, Sweden
- conference dates
- 2002-06-24 - 2002-06-28
- language
- English
- LU publication?
- yes
- id
- db11ba0b-2569-41c1-ab8f-2cf1eac0180d (old id 611514)
- date added to LUP
- 2016-04-04 10:52:27
- date last changed
- 2018-11-21 21:01:17
@inproceedings{db11ba0b-2569-41c1-ab8f-2cf1eac0180d, abstract = {{We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H<sub>2</sub>O in N<sub>2</sub>. The reduction was done in H<sub>2</sub>, which at T<800 °C selectively reduces GeO<sub>2</sub> only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO<sub>2</sub> by Ge, using the reduced Ge dots as the seeds for epitaxy}}, author = {{Zela, Vilma and Sass, T. and Gustafsson, Anders and Pietzonka, I. and Seifert, Werner}}, booktitle = {{7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science}}, keywords = {{Si; 620 degC; Ge; lateral epitaxial overgrowth; Si substrate; phase segregated Ge enrichments; selective reduction; high resolution transmission electron microscopy; UHV-CVD; dome shaped three dimensional islands; Ge/Si islands; reduction behaviour; oxidation behaviour}}, language = {{eng}}, publisher = {{Lund University}}, title = {{Oxidation and reduction behaviour of Ge/Si islands}}, year = {{2002}}, }