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1 volt CMOS Bluetooth front-end

Tillman, Fred LU and Sjöland, Henrik LU orcid (2002) ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference p.795-798
Abstract
A fully integrated 1 V CMOS Bluetooth front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5 mW, the noise figure is 5 dB, the conversion gain is 14 dB, the CP<sub>1</sub> is -16 dBm, and the IIP<sub>3</sub> is -5 dBm. The front-end is implemented in a standard 0.25 μm-CMOS technology
Please use this url to cite or link to this publication:
author
and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
conversion gain, power consumption, topology robustness, measurement correlation, input matching, maximum signal headroom, Bluetooth specification 1.0B, passive mixer, common-gate LNA, CMOS Bluetooth front-end, low IF device, noise figure, Bluetooth receiver, 1 V, 2.5 mW, 5 dB, 14 dB, 0.25 micron
host publication
ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
pages
795 - 798
publisher
Univ. Bologna
conference name
ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
conference location
Firenze, Italy
conference dates
2002-09-24 - 2002-09-26
external identifiers
  • scopus:0141497804
ISBN
88-900847-9-0
language
English
LU publication?
yes
id
0ddc14ee-f137-4f96-8b6e-063e1afd8497 (old id 611540)
date added to LUP
2016-04-04 10:19:07
date last changed
2024-02-28 15:22:07
@inproceedings{0ddc14ee-f137-4f96-8b6e-063e1afd8497,
  abstract     = {{A fully integrated 1 V CMOS Bluetooth front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5 mW, the noise figure is 5 dB, the conversion gain is 14 dB, the CP&lt;sub&gt;1&lt;/sub&gt; is -16 dBm, and the IIP&lt;sub&gt;3&lt;/sub&gt; is -5 dBm. The front-end is implemented in a standard 0.25 μm-CMOS technology}},
  author       = {{Tillman, Fred and Sjöland, Henrik}},
  booktitle    = {{ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference}},
  isbn         = {{88-900847-9-0}},
  keywords     = {{conversion gain; power consumption; topology robustness; measurement correlation; input matching; maximum signal headroom; Bluetooth specification 1.0B; passive mixer; common-gate LNA; CMOS Bluetooth front-end; low IF device; noise figure; Bluetooth receiver; 1 V; 2.5 mW; 5 dB; 14 dB; 0.25 micron}},
  language     = {{eng}},
  pages        = {{795--798}},
  publisher    = {{Univ. Bologna}},
  title        = {{1 volt CMOS Bluetooth front-end}},
  year         = {{2002}},
}