Advanced

1 volt CMOS Bluetooth front-end

Tillman, Fred LU and Sjöland, Henrik LU (2002) ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference In ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference p.795-798
Abstract
A fully integrated 1 V CMOS Bluetooth front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5 mW, the noise figure is 5 dB, the conversion gain is 14 dB, the CP<sub>1</sub> is -16 dBm, and the IIP<sub>3</sub> is -5 dBm. The front-end is implemented in a standard 0.25 μm-CMOS technology
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
conversion gain, power consumption, topology robustness, measurement correlation, input matching, maximum signal headroom, Bluetooth specification 1.0B, passive mixer, common-gate LNA, CMOS Bluetooth front-end, low IF device, noise figure, Bluetooth receiver, 1 V, 2.5 mW, 5 dB, 14 dB, 0.25 micron
in
ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
pages
795 - 798
publisher
Univ. Bologna
conference name
ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
external identifiers
  • Scopus:0141497804
ISBN
88-900847-9-0
language
English
LU publication?
yes
id
0ddc14ee-f137-4f96-8b6e-063e1afd8497 (old id 611540)
date added to LUP
2007-11-29 11:03:43
date last changed
2017-02-19 04:28:51
@inproceedings{0ddc14ee-f137-4f96-8b6e-063e1afd8497,
  abstract     = {A fully integrated 1 V CMOS Bluetooth front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5 mW, the noise figure is 5 dB, the conversion gain is 14 dB, the CP&lt;sub&gt;1&lt;/sub&gt; is -16 dBm, and the IIP&lt;sub&gt;3&lt;/sub&gt; is -5 dBm. The front-end is implemented in a standard 0.25 μm-CMOS technology},
  author       = {Tillman, Fred and Sjöland, Henrik},
  booktitle    = {ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference},
  isbn         = {88-900847-9-0},
  keyword      = {conversion gain,power consumption,topology robustness,measurement correlation,input matching,maximum signal headroom,Bluetooth specification 1.0B,passive mixer,common-gate LNA,CMOS Bluetooth front-end,low IF device,noise figure,Bluetooth receiver,1 V,2.5 mW,5 dB,14 dB,0.25 micron},
  language     = {eng},
  pages        = {795--798},
  publisher    = {Univ. Bologna},
  title        = {1 volt CMOS Bluetooth front-end},
  year         = {2002},
}