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Three-terminal ballistic junctions: New building blocks for functional devices in nanoelectronics

Xu, Hongqi LU (2005) 2005 International Microprocesses and Nanotechnology Conference In Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference 2005. p.260-260
Abstract
Present digital logic gates are primarily built from field effect transistors (FETs) such as complementary metal oxide semiconductors with the gate length in the deep sub-μm regime. As device feature sizes approach the nanometer regime, fundamental physical constraints and increasingly prohibitive economic costs will make further miniaturization in electronic circuits difficult, and this has motivated efforts worldwide to search for new strategies to meet expected computing demands of the future. In the strategy for device fabrication, bottom-up approaches to electronic devices with well-defined nanoscale building blocks have been demonstrated. An alternative strategy is to develop new device concepts by making a revolutionary departure... (More)
Present digital logic gates are primarily built from field effect transistors (FETs) such as complementary metal oxide semiconductors with the gate length in the deep sub-μm regime. As device feature sizes approach the nanometer regime, fundamental physical constraints and increasingly prohibitive economic costs will make further miniaturization in electronic circuits difficult, and this has motivated efforts worldwide to search for new strategies to meet expected computing demands of the future. In the strategy for device fabrication, bottom-up approaches to electronic devices with well-defined nanoscale building blocks have been demonstrated. An alternative strategy is to develop new device concepts by making a revolutionary departure from the FET-based paradigm. The approach must exploit the emerging inherent properties of nanostructures. Here we report on a paradigm based on multi-terminal ballistic junctions (MBJs) [1-7], in which the ballistic nature of electron transport, which has emerged in the nanostructures, is exploited. A typical type of MBJ is the three-terminal ballistic junction (TBJ), a nanostructure- compatible device formed from three ballistically coupled nonlinear conductors such as quantum point contacts, realizable by standard nanofabrication methods. A key requirement in the realization of this type of devices is that carrier transport in the device is ballistic or quasi-ballistic. Various TBJ structures have been fabricated on high-quality semiconductor heterostructures and novel properties of TBJs have been found [1-6]. In particular, we demonstrate that TBJs can be used as diodes and triodes, as well as building blocks for logic circuits. These devices function at room temperature, and the device layout features fabrication by a single-step lithography process that is suitable for mass production with low-cost approaches such as nanoimprint lithography. Furthermore, the demonstrated device principles are expected to apply equally well to multi-terminal junctions made from, e.g., carbon nanotubes and semiconductor nanowires [8]. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Semiconductor nanowires, Multi terminal junctions, Terminal ballistic junction (TBJ), Nonlinear conductors
in
Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference
volume
2005
pages
260 - 260
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
2005 International Microprocesses and Nanotechnology Conference
external identifiers
  • Scopus:33847241904
language
English
LU publication?
yes
id
db9fb70d-a956-443d-a137-39028028f4a1 (old id 616278)
alternative location
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1595313
date added to LUP
2007-11-25 17:43:09
date last changed
2017-01-01 07:57:30
@inproceedings{db9fb70d-a956-443d-a137-39028028f4a1,
  abstract     = {Present digital logic gates are primarily built from field effect transistors (FETs) such as complementary metal oxide semiconductors with the gate length in the deep sub-μm regime. As device feature sizes approach the nanometer regime, fundamental physical constraints and increasingly prohibitive economic costs will make further miniaturization in electronic circuits difficult, and this has motivated efforts worldwide to search for new strategies to meet expected computing demands of the future. In the strategy for device fabrication, bottom-up approaches to electronic devices with well-defined nanoscale building blocks have been demonstrated. An alternative strategy is to develop new device concepts by making a revolutionary departure from the FET-based paradigm. The approach must exploit the emerging inherent properties of nanostructures. Here we report on a paradigm based on multi-terminal ballistic junctions (MBJs) [1-7], in which the ballistic nature of electron transport, which has emerged in the nanostructures, is exploited. A typical type of MBJ is the three-terminal ballistic junction (TBJ), a nanostructure- compatible device formed from three ballistically coupled nonlinear conductors such as quantum point contacts, realizable by standard nanofabrication methods. A key requirement in the realization of this type of devices is that carrier transport in the device is ballistic or quasi-ballistic. Various TBJ structures have been fabricated on high-quality semiconductor heterostructures and novel properties of TBJs have been found [1-6]. In particular, we demonstrate that TBJs can be used as diodes and triodes, as well as building blocks for logic circuits. These devices function at room temperature, and the device layout features fabrication by a single-step lithography process that is suitable for mass production with low-cost approaches such as nanoimprint lithography. Furthermore, the demonstrated device principles are expected to apply equally well to multi-terminal junctions made from, e.g., carbon nanotubes and semiconductor nanowires [8].},
  author       = {Xu, Hongqi},
  booktitle    = {Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference},
  keyword      = {Semiconductor nanowires,Multi terminal junctions,Terminal ballistic junction (TBJ),Nonlinear conductors},
  language     = {eng},
  pages        = {260--260},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {Three-terminal ballistic junctions: New building blocks for functional devices in nanoelectronics},
  volume       = {2005},
  year         = {2005},
}