Growth and characterization of single crystal semiconductor nanowires
(2006) 2006 IEEE LEOS Annual Meeting Conference p.106-107- Abstract
- Nanowire technology allows a bottom-up approach towards fabricating extremely small devices with negligible surface damage and with very high materials quality. The control of position, dimensions and formation of abrupt heterostructures will be described and examples of electronic and photonic devices can be created by this approach
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/616992
- author
- Samuelson, Lars LU
- organization
- publishing date
- 2006
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- photonic device, electronic device, single crystal semiconductor nanowires growth, semiconductor nanowires characterization
- host publication
- 2006 IEEE LEOS Annual Meeting Conference
- pages
- 2 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2006 IEEE LEOS Annual Meeting Conference
- conference location
- Montreal, Que., Canada
- conference dates
- 2006-10-29 - 2006-11-02
- external identifiers
-
- wos:000246167900054
- scopus:39049127488
- ISBN
- 0-7803-9555-7
- DOI
- 10.1109/LEOS.2006.278878
- language
- English
- LU publication?
- yes
- id
- 7113f380-c299-4780-a7c0-1f8c457d5aa1 (old id 616992)
- date added to LUP
- 2016-04-04 10:19:09
- date last changed
- 2022-01-29 20:09:50
@inproceedings{7113f380-c299-4780-a7c0-1f8c457d5aa1, abstract = {{Nanowire technology allows a bottom-up approach towards fabricating extremely small devices with negligible surface damage and with very high materials quality. The control of position, dimensions and formation of abrupt heterostructures will be described and examples of electronic and photonic devices can be created by this approach}}, author = {{Samuelson, Lars}}, booktitle = {{2006 IEEE LEOS Annual Meeting Conference}}, isbn = {{0-7803-9555-7}}, keywords = {{photonic device; electronic device; single crystal semiconductor nanowires growth; semiconductor nanowires characterization}}, language = {{eng}}, pages = {{106--107}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Growth and characterization of single crystal semiconductor nanowires}}, url = {{http://dx.doi.org/10.1109/LEOS.2006.278878}}, doi = {{10.1109/LEOS.2006.278878}}, year = {{2006}}, }