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Measured CMOS Switched High-Quality Capacitors in a Reconfigurable Matching Network

Sjöblom, Peter LU and Sjöland, Henrik LU (2007) In IEEE Transactions on Circuits and Systems - II - Express Briefs 54(10). p.858-862
Abstract
Switched capacitors are here investigated for use in reconfigurable matching networks, particularly for DVB-H frequencies. A 0.13 um CMOS circuit is evaluated through both simulations and measurements. Source grounded NMOS transistors are used to switch high quality metal capacitors located above metal layer 8. The quality factor and tuning range depend on frequency, switch voltage, capacitor size, and transistor width. There is a clear trade-off between quality factor and tuning range, and measurements show quality factors above 50, 100, and 150 at tuning ranges of 3.9, 2.4, and 1.6, respectively. A reconfigurable matching network with the switched capacitors has been realized using external inductors and the measured matching domain for... (More)
Switched capacitors are here investigated for use in reconfigurable matching networks, particularly for DVB-H frequencies. A 0.13 um CMOS circuit is evaluated through both simulations and measurements. Source grounded NMOS transistors are used to switch high quality metal capacitors located above metal layer 8. The quality factor and tuning range depend on frequency, switch voltage, capacitor size, and transistor width. There is a clear trade-off between quality factor and tuning range, and measurements show quality factors above 50, 100, and 150 at tuning ranges of 3.9, 2.4, and 1.6, respectively. A reconfigurable matching network with the switched capacitors has been realized using external inductors and the measured matching domain for the DVB-H frequency band is shown. The total loss of the network is 1.0 dB, a result of the high quality switched capacitors. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
matching, MEMS, CMOS, switched capacitor, DVB-H
in
IEEE Transactions on Circuits and Systems - II - Express Briefs
volume
54
issue
10
pages
858 - 862
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000250374400006
  • scopus:36249031073
ISSN
1558-3791
DOI
10.1109/TCSII.2007.901629
language
English
LU publication?
yes
id
5cd6607c-7618-4716-b7c6-b8efbc13a0b1 (old id 619795)
date added to LUP
2007-12-12 11:17:15
date last changed
2017-10-01 03:36:50
@article{5cd6607c-7618-4716-b7c6-b8efbc13a0b1,
  abstract     = {Switched capacitors are here investigated for use in reconfigurable matching networks, particularly for DVB-H frequencies. A 0.13 um CMOS circuit is evaluated through both simulations and measurements. Source grounded NMOS transistors are used to switch high quality metal capacitors located above metal layer 8. The quality factor and tuning range depend on frequency, switch voltage, capacitor size, and transistor width. There is a clear trade-off between quality factor and tuning range, and measurements show quality factors above 50, 100, and 150 at tuning ranges of 3.9, 2.4, and 1.6, respectively. A reconfigurable matching network with the switched capacitors has been realized using external inductors and the measured matching domain for the DVB-H frequency band is shown. The total loss of the network is 1.0 dB, a result of the high quality switched capacitors.},
  author       = {Sjöblom, Peter and Sjöland, Henrik},
  issn         = {1558-3791},
  keyword      = {matching,MEMS,CMOS,switched capacitor,DVB-H},
  language     = {eng},
  number       = {10},
  pages        = {858--862},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Circuits and Systems - II - Express Briefs},
  title        = {Measured CMOS Switched High-Quality Capacitors in a Reconfigurable Matching Network},
  url          = {http://dx.doi.org/10.1109/TCSII.2007.901629},
  volume       = {54},
  year         = {2007},
}