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Metal oxide nanoparticles as novel gate materials for field-effect gas sensors

Roy, S; Salomonsson, A; Lloyd Spetz, A; Aulin, C; Kall, PO; Ojamae, L; Strand, M and Sanati, Mehri LU (2006) In Materials and Manufacturing Processes 21(3). p.275-278
Abstract
Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
accumulation region, adsorption, capacitance voltage (C-V), depletion region, field-effect, gas sensors, gate material, high frequency, high temperature, interface, metal-insulator-seimconductor (MISIC), nano particles, ruthenium oxide, silicon carbide, transient response
in
Materials and Manufacturing Processes
volume
21
issue
3
pages
275 - 278
publisher
Taylor & Francis
external identifiers
  • scopus:33645794804
ISSN
1042-6914
DOI
10.1080/10426910500464651
language
English
LU publication?
yes
id
ab2caaaa-c428-4c24-ab1b-cfc8c087ce4c (old id 644596)
date added to LUP
2009-03-18 11:31:36
date last changed
2017-10-01 05:13:47
@article{ab2caaaa-c428-4c24-ab1b-cfc8c087ce4c,
  abstract     = {Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.},
  author       = {Roy, S and Salomonsson, A and Lloyd Spetz, A and Aulin, C and Kall, PO and Ojamae, L and Strand, M and Sanati, Mehri},
  issn         = {1042-6914},
  keyword      = {accumulation region,adsorption,capacitance voltage (C-V),depletion region,field-effect,gas sensors,gate material,high frequency,high temperature,interface,metal-insulator-seimconductor (MISIC),nano particles,ruthenium oxide,silicon carbide,transient response},
  language     = {eng},
  number       = {3},
  pages        = {275--278},
  publisher    = {Taylor & Francis},
  series       = {Materials and Manufacturing Processes},
  title        = {Metal oxide nanoparticles as novel gate materials for field-effect gas sensors},
  url          = {http://dx.doi.org/10.1080/10426910500464651},
  volume       = {21},
  year         = {2006},
}