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The region ion sensitive field effect transistor, a novel bioelectronic nanosensor

Risveden, Klas LU ; Pontén, Fredrik LU ; Calander, N.; Willander, M. and Danielsson, Bengt LU (2007) In Biosensors & Bioelectronics 22(12). p.3105-3112
Abstract
A novel type of bioelectronic region ion sensitive field effect transistor (RISFET) nanosensor was constructed and demonstrated on two different sensor chips that could measure glucose with good linearity in the range of 0-0.6 mM and 0-0.3 mM with a limit of detection of 0.1 and 0.04 mM, respectively. The sensor is based on the principle of focusing charged reaction products with an electrical field in a region between the sensing electrodes. For glucose measurements, negatively charged gluconate ions were gathered between the sensing electrodes. The signal current response was measured using a low-noise pico ammeter (pA). Two different sizes of the RISFET sensor chips were constructed using conventional electron beam lithography. The... (More)
A novel type of bioelectronic region ion sensitive field effect transistor (RISFET) nanosensor was constructed and demonstrated on two different sensor chips that could measure glucose with good linearity in the range of 0-0.6 mM and 0-0.3 mM with a limit of detection of 0.1 and 0.04 mM, respectively. The sensor is based on the principle of focusing charged reaction products with an electrical field in a region between the sensing electrodes. For glucose measurements, negatively charged gluconate ions were gathered between the sensing electrodes. The signal current response was measured using a low-noise pico ammeter (pA). Two different sizes of the RISFET sensor chips were constructed using conventional electron beam lithography. The measurements are done in partial volumes mainly restricted by the working distance between the sensing electrodes (790 and 2500 nm, respectively) and the influence of electrical fields that are concentrating the ions. The sensitivity was 28 pA/mM (2500 nm) and 830 pA/mM (790 nm), respectively. That is an increase in field strength by five times between the sensing electrodes increased the sensitivity by 30 times. The volumes expressed in this way are in low or sub femtoliter range. Preliminary studies revealed that with suitable modification and control of parameters such as the electric control signals and the chip electrode dimensions this sensor could also be used as a nanobiosensor by applying single enzyme molecule trapping. Hypotheses are given for impedance factors of the RISFET conducting channel. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
electron beam lithography, nanosensor, nanostructures, microscopy, atomic force
in
Biosensors & Bioelectronics
volume
22
issue
12
pages
3105 - 3112
publisher
Elsevier
external identifiers
  • wos:000247555300049
  • scopus:34248570452
ISSN
1873-4235
DOI
10.1016/j.bios.2007.01.019
language
English
LU publication?
yes
id
8d6e96dc-04f1-4603-91e0-de138c94c2dc (old id 647865)
date added to LUP
2007-12-14 12:08:19
date last changed
2017-01-01 06:41:48
@article{8d6e96dc-04f1-4603-91e0-de138c94c2dc,
  abstract     = {A novel type of bioelectronic region ion sensitive field effect transistor (RISFET) nanosensor was constructed and demonstrated on two different sensor chips that could measure glucose with good linearity in the range of 0-0.6 mM and 0-0.3 mM with a limit of detection of 0.1 and 0.04 mM, respectively. The sensor is based on the principle of focusing charged reaction products with an electrical field in a region between the sensing electrodes. For glucose measurements, negatively charged gluconate ions were gathered between the sensing electrodes. The signal current response was measured using a low-noise pico ammeter (pA). Two different sizes of the RISFET sensor chips were constructed using conventional electron beam lithography. The measurements are done in partial volumes mainly restricted by the working distance between the sensing electrodes (790 and 2500 nm, respectively) and the influence of electrical fields that are concentrating the ions. The sensitivity was 28 pA/mM (2500 nm) and 830 pA/mM (790 nm), respectively. That is an increase in field strength by five times between the sensing electrodes increased the sensitivity by 30 times. The volumes expressed in this way are in low or sub femtoliter range. Preliminary studies revealed that with suitable modification and control of parameters such as the electric control signals and the chip electrode dimensions this sensor could also be used as a nanobiosensor by applying single enzyme molecule trapping. Hypotheses are given for impedance factors of the RISFET conducting channel.},
  author       = {Risveden, Klas and Pontén, Fredrik and Calander, N. and Willander, M. and Danielsson, Bengt},
  issn         = {1873-4235},
  keyword      = {electron beam lithography,nanosensor,nanostructures,microscopy,atomic force},
  language     = {eng},
  number       = {12},
  pages        = {3105--3112},
  publisher    = {Elsevier},
  series       = {Biosensors & Bioelectronics},
  title        = {The region ion sensitive field effect transistor, a novel bioelectronic nanosensor},
  url          = {http://dx.doi.org/10.1016/j.bios.2007.01.019},
  volume       = {22},
  year         = {2007},
}