Advanced

Ultrathin ZrO2 films on Si-rich SiC(0001)-(3x3): Growth and thermal stability

Karlsson, P. G.; Johansson, L. I.; Richter, J. H.; Virojanadara, C.; Blomquist, Jakob LU ; Uvdal, Per LU and Sandell, A. (2007) In Surface Science 601(11). p.2390-2400
Abstract
The growth and thermal stability of ultrathin ZrO2 films on the Si-rich Si(0001)-(3 x 3) surface have been explored using photoelectron spectroscopy (PES) and X-ray absorption spectroscopy (XAS). The films were grown in situ by chemical vapor deposition using the zirconium tetra tert-butoxide (ZTB) precursor. The O 1s XAS results show that growth at 400 degrees C yields tetragonal ZrO2. An interface is formed between the ZrO2 film and the SiC substrate. The interface contains Si in several chemically different states. This gives evidence for an interface that is much more complex than that formed upon oxidation with O-2. Si in a 4+ oxidation state is detected in the near surface region. This shows that intermixing of SiO2 and ZrO2 occurs,... (More)
The growth and thermal stability of ultrathin ZrO2 films on the Si-rich Si(0001)-(3 x 3) surface have been explored using photoelectron spectroscopy (PES) and X-ray absorption spectroscopy (XAS). The films were grown in situ by chemical vapor deposition using the zirconium tetra tert-butoxide (ZTB) precursor. The O 1s XAS results show that growth at 400 degrees C yields tetragonal ZrO2. An interface is formed between the ZrO2 film and the SiC substrate. The interface contains Si in several chemically different states. This gives evidence for an interface that is much more complex than that formed upon oxidation with O-2. Si in a 4+ oxidation state is detected in the near surface region. This shows that intermixing of SiO2 and ZrO2 occurs, possibly under the formation of silicate. The alignment of the ZrO2 and SiC band edges is discussed based on core level and valence PES spectra. Subsequent annealing of a deposited film was performed in order to study the thermal stability of the system. Annealing to 800 degrees C does not lead to decomposition of the tetragonal ZrO2 (t-ZrO2) but changes are observed within the interface region. After annealing to 1000 degrees C a laterally heterogeneous layer has formed. The decomposition of the film leads to regions with t-ZrO2 remnants, metallic Zr silicide and Si aggregates. (c) 2007 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
photoelectron, spectroscopy, X-ray absorption spectroscopy, synchrotron radiation, semiconductor-insulator interfaces, chemical vapor deposition, zirconium dioxide, silicon carbide
in
Surface Science
volume
601
issue
11
pages
2390 - 2400
publisher
Elsevier
external identifiers
  • wos:000247408600016
  • scopus:34249274946
ISSN
0039-6028
DOI
10.1016/j.susc.2007.04.026
language
English
LU publication?
yes
id
73a92fe0-f3d1-4dd8-bc7a-cd8adec33700 (old id 648228)
date added to LUP
2007-12-13 16:12:31
date last changed
2017-06-18 04:25:19
@article{73a92fe0-f3d1-4dd8-bc7a-cd8adec33700,
  abstract     = {The growth and thermal stability of ultrathin ZrO2 films on the Si-rich Si(0001)-(3 x 3) surface have been explored using photoelectron spectroscopy (PES) and X-ray absorption spectroscopy (XAS). The films were grown in situ by chemical vapor deposition using the zirconium tetra tert-butoxide (ZTB) precursor. The O 1s XAS results show that growth at 400 degrees C yields tetragonal ZrO2. An interface is formed between the ZrO2 film and the SiC substrate. The interface contains Si in several chemically different states. This gives evidence for an interface that is much more complex than that formed upon oxidation with O-2. Si in a 4+ oxidation state is detected in the near surface region. This shows that intermixing of SiO2 and ZrO2 occurs, possibly under the formation of silicate. The alignment of the ZrO2 and SiC band edges is discussed based on core level and valence PES spectra. Subsequent annealing of a deposited film was performed in order to study the thermal stability of the system. Annealing to 800 degrees C does not lead to decomposition of the tetragonal ZrO2 (t-ZrO2) but changes are observed within the interface region. After annealing to 1000 degrees C a laterally heterogeneous layer has formed. The decomposition of the film leads to regions with t-ZrO2 remnants, metallic Zr silicide and Si aggregates. (c) 2007 Elsevier B.V. All rights reserved.},
  author       = {Karlsson, P. G. and Johansson, L. I. and Richter, J. H. and Virojanadara, C. and Blomquist, Jakob and Uvdal, Per and Sandell, A.},
  issn         = {0039-6028},
  keyword      = {photoelectron,spectroscopy,X-ray absorption spectroscopy,synchrotron radiation,semiconductor-insulator interfaces,chemical vapor deposition,zirconium dioxide,silicon carbide},
  language     = {eng},
  number       = {11},
  pages        = {2390--2400},
  publisher    = {Elsevier},
  series       = {Surface Science},
  title        = {Ultrathin ZrO2 films on Si-rich SiC(0001)-(3x3): Growth and thermal stability},
  url          = {http://dx.doi.org/10.1016/j.susc.2007.04.026},
  volume       = {601},
  year         = {2007},
}