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A high-resolution core-level photoemission study of the Au/4H-SiC(0001)-(root 3 x root 3) interface

Stoltz, D.; Stoltz, Sven LU and Johansson, L. S. O. (2007) In Journal of Physics: Condensed Matter 19(26).
Abstract
We present a systematic study of different reconstructions obtained after deposition of Au on the (root 3 x root 3)- R30 degrees- 4H- SiC( 0001) surface. For 1-2 monolayers ( ML) Au and annealing temperature T-anneal similar to 675 degrees C, a 3 x 3 reconstruction was observed. For 4 ML Au and T-anneal similar to 650 degrees C, a ( 2 root 3 x 2 root 3)- R30 degrees. reconstruction appeared, while 5ML Au annealed at 700 degrees C reconstructed to give a ( 6 root 3 x 6 root 3)- R30 degrees. pattern. From the Si 2p and Au 4f core- level components, we propose interface models, depending on the amount of Au on the surface and the annealing temperature. For 1 - 4 ML Au annealed at 650 - 675 degrees C, gold diffuses under the topmost Si into... (More)
We present a systematic study of different reconstructions obtained after deposition of Au on the (root 3 x root 3)- R30 degrees- 4H- SiC( 0001) surface. For 1-2 monolayers ( ML) Au and annealing temperature T-anneal similar to 675 degrees C, a 3 x 3 reconstruction was observed. For 4 ML Au and T-anneal similar to 650 degrees C, a ( 2 root 3 x 2 root 3)- R30 degrees. reconstruction appeared, while 5ML Au annealed at 700 degrees C reconstructed to give a ( 6 root 3 x 6 root 3)- R30 degrees. pattern. From the Si 2p and Au 4f core- level components, we propose interface models, depending on the amount of Au on the surface and the annealing temperature. For 1 - 4 ML Au annealed at 650 - 675 degrees C, gold diffuses under the topmost Si into the SiC and forms a silicide. An additional Si component in our Si 2p spectra is related to the interface between the silicide and SiC. For 5 ML Au annealed at 700 degrees C, silicide is also formed at the surface, covering unreacted Au on top of the SiC substrate. The interface Si component is also observed in the Si 2p spectra of this surface. The key role in Au/root 3- 4H- SiC( 0001) interface formation is played by diffusion and the silicon- richness of the surface. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Physics: Condensed Matter
volume
19
issue
26
publisher
IOP Publishing
external identifiers
  • wos:000247400700006
  • scopus:34250788712
ISSN
1361-648X
DOI
10.1088/0953-8984/19/26/266006
language
English
LU publication?
yes
id
07a4b640-2476-4307-ad1f-26bcc33642e1 (old id 648355)
date added to LUP
2007-12-20 13:32:30
date last changed
2017-01-01 06:44:06
@article{07a4b640-2476-4307-ad1f-26bcc33642e1,
  abstract     = {We present a systematic study of different reconstructions obtained after deposition of Au on the (root 3 x root 3)- R30 degrees- 4H- SiC( 0001) surface. For 1-2 monolayers ( ML) Au and annealing temperature T-anneal similar to 675 degrees C, a 3 x 3 reconstruction was observed. For 4 ML Au and T-anneal similar to 650 degrees C, a ( 2 root 3 x 2 root 3)- R30 degrees. reconstruction appeared, while 5ML Au annealed at 700 degrees C reconstructed to give a ( 6 root 3 x 6 root 3)- R30 degrees. pattern. From the Si 2p and Au 4f core- level components, we propose interface models, depending on the amount of Au on the surface and the annealing temperature. For 1 - 4 ML Au annealed at 650 - 675 degrees C, gold diffuses under the topmost Si into the SiC and forms a silicide. An additional Si component in our Si 2p spectra is related to the interface between the silicide and SiC. For 5 ML Au annealed at 700 degrees C, silicide is also formed at the surface, covering unreacted Au on top of the SiC substrate. The interface Si component is also observed in the Si 2p spectra of this surface. The key role in Au/root 3- 4H- SiC( 0001) interface formation is played by diffusion and the silicon- richness of the surface.},
  author       = {Stoltz, D. and Stoltz, Sven and Johansson, L. S. O.},
  issn         = {1361-648X},
  language     = {eng},
  number       = {26},
  publisher    = {IOP Publishing},
  series       = {Journal of Physics: Condensed Matter},
  title        = {A high-resolution core-level photoemission study of the Au/4H-SiC(0001)-(root 3 x root 3) interface},
  url          = {http://dx.doi.org/10.1088/0953-8984/19/26/266006},
  volume       = {19},
  year         = {2007},
}