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Carrier transport in broken-gap heterostructures tuned by a magnetic field

Nilsson, Karin LU ; Zakharova, A.; Semenikhin, I. and Chao, Koung-An LU (2007) In Physical Review B (Condensed Matter and Materials Physics) 75(20).
Abstract
We have performed an eight-band k center dot p model calculation on the current-voltage (I-V) curves associated with interband magnetotransport in a double-barrier broken-gap heterostructure using the Burt-Foreman multiband envelope function theory and the scattering matrix approach. In a sample with very thin barriers, the broadening Gamma(0) of a virtual bound state with energy E-0 can be very large. Depending on the relative values of Gamma(0) and parallel to E-0-E-F parallel to, where E-F is the Fermi energy, the behavior of the I-V curve can be either of Ohmic type or of resonant-tunneling type, and can be tuned from one to the other by changing the applied magnetic-field strength.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
75
issue
20
publisher
American Physical Society
external identifiers
  • wos:000246890900075
  • scopus:34347388250
ISSN
1098-0121
DOI
10.1103/PhysRevB.75.205318
language
English
LU publication?
yes
id
d29e79d0-b9b4-4d2d-875c-70d5fb2801ae (old id 650646)
date added to LUP
2007-12-14 08:15:47
date last changed
2017-01-01 07:13:51
@article{d29e79d0-b9b4-4d2d-875c-70d5fb2801ae,
  abstract     = {We have performed an eight-band k center dot p model calculation on the current-voltage (I-V) curves associated with interband magnetotransport in a double-barrier broken-gap heterostructure using the Burt-Foreman multiband envelope function theory and the scattering matrix approach. In a sample with very thin barriers, the broadening Gamma(0) of a virtual bound state with energy E-0 can be very large. Depending on the relative values of Gamma(0) and parallel to E-0-E-F parallel to, where E-F is the Fermi energy, the behavior of the I-V curve can be either of Ohmic type or of resonant-tunneling type, and can be tuned from one to the other by changing the applied magnetic-field strength.},
  author       = {Nilsson, Karin and Zakharova, A. and Semenikhin, I. and Chao, Koung-An},
  issn         = {1098-0121},
  language     = {eng},
  number       = {20},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Carrier transport in broken-gap heterostructures tuned by a magnetic field},
  url          = {http://dx.doi.org/10.1103/PhysRevB.75.205318},
  volume       = {75},
  year         = {2007},
}