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Carrier transport in broken-gap heterostructures tuned by a magnetic field

Nilsson, Karin LU ; Zakharova, A. ; Semenikhin, I. and Chao, Koung-An LU (2007) In Physical Review B (Condensed Matter and Materials Physics) 75(20).
Abstract
We have performed an eight-band k center dot p model calculation on the current-voltage (I-V) curves associated with interband magnetotransport in a double-barrier broken-gap heterostructure using the Burt-Foreman multiband envelope function theory and the scattering matrix approach. In a sample with very thin barriers, the broadening Gamma(0) of a virtual bound state with energy E-0 can be very large. Depending on the relative values of Gamma(0) and parallel to E-0-E-F parallel to, where E-F is the Fermi energy, the behavior of the I-V curve can be either of Ohmic type or of resonant-tunneling type, and can be tuned from one to the other by changing the applied magnetic-field strength.
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
75
issue
20
publisher
American Physical Society
external identifiers
  • wos:000246890900075
  • scopus:34347388250
ISSN
1098-0121
DOI
10.1103/PhysRevB.75.205318
language
English
LU publication?
yes
id
d29e79d0-b9b4-4d2d-875c-70d5fb2801ae (old id 650646)
date added to LUP
2016-04-01 16:44:32
date last changed
2022-01-28 21:50:25
@article{d29e79d0-b9b4-4d2d-875c-70d5fb2801ae,
  abstract     = {{We have performed an eight-band k center dot p model calculation on the current-voltage (I-V) curves associated with interband magnetotransport in a double-barrier broken-gap heterostructure using the Burt-Foreman multiband envelope function theory and the scattering matrix approach. In a sample with very thin barriers, the broadening Gamma(0) of a virtual bound state with energy E-0 can be very large. Depending on the relative values of Gamma(0) and parallel to E-0-E-F parallel to, where E-F is the Fermi energy, the behavior of the I-V curve can be either of Ohmic type or of resonant-tunneling type, and can be tuned from one to the other by changing the applied magnetic-field strength.}},
  author       = {{Nilsson, Karin and Zakharova, A. and Semenikhin, I. and Chao, Koung-An}},
  issn         = {{1098-0121}},
  language     = {{eng}},
  number       = {{20}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B (Condensed Matter and Materials Physics)}},
  title        = {{Carrier transport in broken-gap heterostructures tuned by a magnetic field}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.75.205318}},
  doi          = {{10.1103/PhysRevB.75.205318}},
  volume       = {{75}},
  year         = {{2007}},
}