Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements
(2013) China Semiconductor Technology International Conference (CSTIC) 52(1). p.415-419- Abstract
- We here present simulations of the effect of border traps on the behavior of a III-V FET's transconductance with respect to frequency. We also compare simulations with a recently developed analytical model for extracting the border trap distribution through measurements of the transconductance, find good agreement between the extracted and simulated transconductance.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4598873
- author
- Lind, Erik LU and Johansson, Sofia LU
- organization
- publishing date
- 2013
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- ECS Transactions
- volume
- 52
- issue
- 1
- pages
- 415 - 419
- publisher
- Electrochemical Society
- conference name
- China Semiconductor Technology International Conference (CSTIC)
- conference location
- Shanghai, China
- conference dates
- 2013-03-17 - 2013-03-18
- external identifiers
-
- wos:000338945700062
- scopus:84875944660
- ISSN
- 1938-5862
- 1938-6737
- DOI
- 10.1149/05201.0415ecst
- language
- English
- LU publication?
- yes
- id
- 65b60a1e-ace4-413b-8ef6-38a474920180 (old id 4598873)
- date added to LUP
- 2016-04-01 10:48:51
- date last changed
- 2024-08-26 09:00:07
@inproceedings{65b60a1e-ace4-413b-8ef6-38a474920180, abstract = {{We here present simulations of the effect of border traps on the behavior of a III-V FET's transconductance with respect to frequency. We also compare simulations with a recently developed analytical model for extracting the border trap distribution through measurements of the transconductance, find good agreement between the extracted and simulated transconductance.}}, author = {{Lind, Erik and Johansson, Sofia}}, booktitle = {{ECS Transactions}}, issn = {{1938-5862}}, language = {{eng}}, number = {{1}}, pages = {{415--419}}, publisher = {{Electrochemical Society}}, title = {{Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements}}, url = {{http://dx.doi.org/10.1149/05201.0415ecst}}, doi = {{10.1149/05201.0415ecst}}, volume = {{52}}, year = {{2013}}, }