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Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements

Lind, Erik LU and Johansson, Sofia LU (2013) China Semiconductor Technology International Conference (CSTIC) 52(1). p.415-419
Abstract
We here present simulations of the effect of border traps on the behavior of a III-V FET's transconductance with respect to frequency. We also compare simulations with a recently developed analytical model for extracting the border trap distribution through measurements of the transconductance, find good agreement between the extracted and simulated transconductance.
Please use this url to cite or link to this publication:
author
and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
ECS Transactions
volume
52
issue
1
pages
415 - 419
publisher
Electrochemical Society
conference name
China Semiconductor Technology International Conference (CSTIC)
conference location
Shanghai, China
conference dates
2013-03-17 - 2013-03-18
external identifiers
  • wos:000338945700062
  • scopus:84875944660
ISSN
1938-5862
1938-6737
DOI
10.1149/05201.0415ecst
language
English
LU publication?
yes
id
65b60a1e-ace4-413b-8ef6-38a474920180 (old id 4598873)
date added to LUP
2016-04-01 10:48:51
date last changed
2024-01-07 01:53:31
@inproceedings{65b60a1e-ace4-413b-8ef6-38a474920180,
  abstract     = {{We here present simulations of the effect of border traps on the behavior of a III-V FET's transconductance with respect to frequency. We also compare simulations with a recently developed analytical model for extracting the border trap distribution through measurements of the transconductance, find good agreement between the extracted and simulated transconductance.}},
  author       = {{Lind, Erik and Johansson, Sofia}},
  booktitle    = {{ECS Transactions}},
  issn         = {{1938-5862}},
  language     = {{eng}},
  number       = {{1}},
  pages        = {{415--419}},
  publisher    = {{Electrochemical Society}},
  title        = {{Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements}},
  url          = {{http://dx.doi.org/10.1149/05201.0415ecst}},
  doi          = {{10.1149/05201.0415ecst}},
  volume       = {{52}},
  year         = {{2013}},
}