Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells
(2020) In Solar Energy Materials and Solar Cells 207.- Abstract
This paper addresses the influence of III-V nucleation routines on Ge substrates for the growth of high efficiency multijunction solar cells. Three exemplary nucleation routines with differences in thickness and temperature were evaluated. The resulting open circuit voltage of triple-junction solar cells with these designs is significantly affected (up to 50 mV for the best optimization routine), whereas minimal differences in short circuit current are observed. Electroluminescence measurements show that both the Ge bottom cell and the Ga(In)As middle cell present a VOC gain of 25 mV each. This result indicates that the first stages of the growth not only affect the Ge subcell itself but also to subsequent subcells. This... (More)
This paper addresses the influence of III-V nucleation routines on Ge substrates for the growth of high efficiency multijunction solar cells. Three exemplary nucleation routines with differences in thickness and temperature were evaluated. The resulting open circuit voltage of triple-junction solar cells with these designs is significantly affected (up to 50 mV for the best optimization routine), whereas minimal differences in short circuit current are observed. Electroluminescence measurements show that both the Ge bottom cell and the Ga(In)As middle cell present a VOC gain of 25 mV each. This result indicates that the first stages of the growth not only affect the Ge subcell itself but also to subsequent subcells. This study highlights the impact of the nucleation routine design in the performance of high efficiency multijunction solar cell based on Ge substrates.
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- author
- Barrutia, Laura ; García, Iván ; Barrigón, Enrique LU ; Ochoa, Mario ; Algora, Carlos and Rey-Stolle, Ignacio
- organization
- publishing date
- 2020
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Ge bottom cell, III-V semiconductor, Multijunction solar cell, Thermal load, V
- in
- Solar Energy Materials and Solar Cells
- volume
- 207
- article number
- 110355
- publisher
- Elsevier
- external identifiers
-
- scopus:85076704762
- ISSN
- 0927-0248
- DOI
- 10.1016/j.solmat.2019.110355
- language
- English
- LU publication?
- yes
- id
- 667ec936-b15f-4b0c-b5dc-a58e6e0cde3d
- date added to LUP
- 2020-01-02 11:54:14
- date last changed
- 2023-10-22 01:18:53
@article{667ec936-b15f-4b0c-b5dc-a58e6e0cde3d,
abstract = {{<p>This paper addresses the influence of III-V nucleation routines on Ge substrates for the growth of high efficiency multijunction solar cells. Three exemplary nucleation routines with differences in thickness and temperature were evaluated. The resulting open circuit voltage of triple-junction solar cells with these designs is significantly affected (up to 50 mV for the best optimization routine), whereas minimal differences in short circuit current are observed. Electroluminescence measurements show that both the Ge bottom cell and the Ga(In)As middle cell present a V<sub>OC</sub> gain of 25 mV each. This result indicates that the first stages of the growth not only affect the Ge subcell itself but also to subsequent subcells. This study highlights the impact of the nucleation routine design in the performance of high efficiency multijunction solar cell based on Ge substrates.</p>}},
author = {{Barrutia, Laura and García, Iván and Barrigón, Enrique and Ochoa, Mario and Algora, Carlos and Rey-Stolle, Ignacio}},
issn = {{0927-0248}},
keywords = {{Ge bottom cell; III-V semiconductor; Multijunction solar cell; Thermal load; V}},
language = {{eng}},
publisher = {{Elsevier}},
series = {{Solar Energy Materials and Solar Cells}},
title = {{Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells}},
url = {{http://dx.doi.org/10.1016/j.solmat.2019.110355}},
doi = {{10.1016/j.solmat.2019.110355}},
volume = {{207}},
year = {{2020}},
}