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Surface chemistry of HfI4 on Si(100)-(2 x 1) studied by core level photoelectron spectroscopy

Sandell, A.; Karlsson, P. G.; Richter, J. H.; Blomquist, Jakob LU and Uvdal, Per LU (2007) In Surface Science 601(4). p.917-923
Abstract
The chemistry Of HfI4 adsorbed on the Si(100)-(2x1) surface has been studied by core level photoelectron spectroscopy in ultra-high vacuum. Two stable surface intermediates are identified: HfI3 and HfI2, both of which remain upon heating to 690 K. The dissociation of HfI4 is accompanied by the formation of SiI. In addition, HfI4 is Observed up to 300 K. Complete desorption of iodine occurs in the temperature regime 690-780 K. Deposition of HfI4 at 870 K results in a layer consisting of metallic Hf, whereas deposition at 1120 K results in the formation of Hf silicide. The results indicate that the metallic Hf formed at 870 K is in the form of particles. Oxidation of this film by O-2 at low pressure does not result in complete Hf oxidation.... (More)
The chemistry Of HfI4 adsorbed on the Si(100)-(2x1) surface has been studied by core level photoelectron spectroscopy in ultra-high vacuum. Two stable surface intermediates are identified: HfI3 and HfI2, both of which remain upon heating to 690 K. The dissociation of HfI4 is accompanied by the formation of SiI. In addition, HfI4 is Observed up to 300 K. Complete desorption of iodine occurs in the temperature regime 690-780 K. Deposition of HfI4 at 870 K results in a layer consisting of metallic Hf, whereas deposition at 1120 K results in the formation of Hf silicide. The results indicate that the metallic Hf formed at 870 K is in the form of particles. Oxidation of this film by O-2 at low pressure does not result in complete Hf oxidation. This suggests that complete oxidation of Hf is a critical step when using HfI4 as precursor in atomic layer deposition. (c) 2006 Elsevier B.V. All rights reserved. (Less)
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organization
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Contribution to journal
publication status
published
subject
keywords
atomic layer deposition, synchrotron radiation photoelectron spectroscopy, crystal surfaces, low index single, silicon, hafnium oxide, chemisorption, hafnium iodide
in
Surface Science
volume
601
issue
4
pages
917 - 923
publisher
Elsevier
external identifiers
  • wos:000245155800008
  • scopus:33846799354
ISSN
0039-6028
DOI
10.1016/j.susc.2006.11.026
language
English
LU publication?
yes
id
b012b9aa-1103-4565-a81e-be43e08198e4 (old id 669509)
date added to LUP
2007-12-18 13:42:51
date last changed
2017-01-01 06:41:36
@article{b012b9aa-1103-4565-a81e-be43e08198e4,
  abstract     = {The chemistry Of HfI4 adsorbed on the Si(100)-(2x1) surface has been studied by core level photoelectron spectroscopy in ultra-high vacuum. Two stable surface intermediates are identified: HfI3 and HfI2, both of which remain upon heating to 690 K. The dissociation of HfI4 is accompanied by the formation of SiI. In addition, HfI4 is Observed up to 300 K. Complete desorption of iodine occurs in the temperature regime 690-780 K. Deposition of HfI4 at 870 K results in a layer consisting of metallic Hf, whereas deposition at 1120 K results in the formation of Hf silicide. The results indicate that the metallic Hf formed at 870 K is in the form of particles. Oxidation of this film by O-2 at low pressure does not result in complete Hf oxidation. This suggests that complete oxidation of Hf is a critical step when using HfI4 as precursor in atomic layer deposition. (c) 2006 Elsevier B.V. All rights reserved.},
  author       = {Sandell, A. and Karlsson, P. G. and Richter, J. H. and Blomquist, Jakob and Uvdal, Per},
  issn         = {0039-6028},
  keyword      = {atomic layer deposition,synchrotron radiation photoelectron spectroscopy,crystal surfaces,low index single,silicon,hafnium oxide,chemisorption,hafnium iodide},
  language     = {eng},
  number       = {4},
  pages        = {917--923},
  publisher    = {Elsevier},
  series       = {Surface Science},
  title        = {Surface chemistry of HfI4 on Si(100)-(2 x 1) studied by core level photoelectron spectroscopy},
  url          = {http://dx.doi.org/10.1016/j.susc.2006.11.026},
  volume       = {601},
  year         = {2007},
}