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Metal organic chemical vapor deposition of ultrathin ZrO2 films on Si(100) and Si(111) studied by electron spectroscopy

Karlsson, P. G.; Richter, J. H.; Blomquist, Jakob LU ; Uvdal, Per LU ; Grehk, T. M. and Sandell, A. (2007) In Surface Science 601(4). p.1008-1018
Abstract
The growth of ultrathin ZrO2 films on Si(100)-(2 x 1) and Si(111)-(7 x 7) has been studied with core level photoelectron spectroscopy and X-ray absorption spectroscopy. The films were deposited sequentially by chemical vapor deposition in ultra-high vacuum using zirconium tetra-tert-butoxide as precursor. Deposition of a > 50 angstrom thick film leads in both cases to tetragonal ZrO2 (t-ZrO2), whereas significant differences are found for thinner films. On Si(111)-(7 x 7) the local structure of t-ZrO2 is not observed until a film thickness of 51 angstrom is reached. On Si(100)-(2 x 1) the local geometric structure of t-ZrO2 is formed already at a film thickness of 11 angstrom. The higher tendency for the formation of t-ZrO2 on Si(100)... (More)
The growth of ultrathin ZrO2 films on Si(100)-(2 x 1) and Si(111)-(7 x 7) has been studied with core level photoelectron spectroscopy and X-ray absorption spectroscopy. The films were deposited sequentially by chemical vapor deposition in ultra-high vacuum using zirconium tetra-tert-butoxide as precursor. Deposition of a > 50 angstrom thick film leads in both cases to tetragonal ZrO2 (t-ZrO2), whereas significant differences are found for thinner films. On Si(111)-(7 x 7) the local structure of t-ZrO2 is not observed until a film thickness of 51 angstrom is reached. On Si(100)-(2 x 1) the local geometric structure of t-ZrO2 is formed already at a film thickness of 11 angstrom. The higher tendency for the formation of t-ZrO2 on Si(100) is discussed in terms of Zr-O valence electron matching to the number of dangling bonds per surface Si atom, The Zr-O hybridization within the ZrO2 unit depends furthermore on the chemical composition of the surrounding. The precursor t-butoxy ligands undergo efficient C-O scission on Si(100), leaving carbonaceous fragments embedded in the interfacial layer. In contrast, after small deposits on Si(111) stable t-butoxy groups are found. These are consumed upon further deposition. Stable methyl and, possibly, also hydroxyl groups are found on both surfaces within a wide film thickness range. (c) 2006 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
photoelectron spectroscopy, synchrotron radiation, semiconductor-insulator interfaces, deposition, chemical vapor, silicon, high dielectrics, zirconium dioxide, X-ray absorption spectroscopy
in
Surface Science
volume
601
issue
4
pages
1008 - 1018
publisher
Elsevier
external identifiers
  • wos:000245155800020
  • scopus:33846796292
ISSN
0039-6028
DOI
10.1016/j.susc.2006.11.038
language
English
LU publication?
yes
id
7d3f0358-743b-46c5-a947-9f8d56513e64 (old id 669515)
date added to LUP
2007-12-13 16:15:21
date last changed
2017-01-01 06:58:01
@article{7d3f0358-743b-46c5-a947-9f8d56513e64,
  abstract     = {The growth of ultrathin ZrO2 films on Si(100)-(2 x 1) and Si(111)-(7 x 7) has been studied with core level photoelectron spectroscopy and X-ray absorption spectroscopy. The films were deposited sequentially by chemical vapor deposition in ultra-high vacuum using zirconium tetra-tert-butoxide as precursor. Deposition of a > 50 angstrom thick film leads in both cases to tetragonal ZrO2 (t-ZrO2), whereas significant differences are found for thinner films. On Si(111)-(7 x 7) the local structure of t-ZrO2 is not observed until a film thickness of 51 angstrom is reached. On Si(100)-(2 x 1) the local geometric structure of t-ZrO2 is formed already at a film thickness of 11 angstrom. The higher tendency for the formation of t-ZrO2 on Si(100) is discussed in terms of Zr-O valence electron matching to the number of dangling bonds per surface Si atom, The Zr-O hybridization within the ZrO2 unit depends furthermore on the chemical composition of the surrounding. The precursor t-butoxy ligands undergo efficient C-O scission on Si(100), leaving carbonaceous fragments embedded in the interfacial layer. In contrast, after small deposits on Si(111) stable t-butoxy groups are found. These are consumed upon further deposition. Stable methyl and, possibly, also hydroxyl groups are found on both surfaces within a wide film thickness range. (c) 2006 Elsevier B.V. All rights reserved.},
  author       = {Karlsson, P. G. and Richter, J. H. and Blomquist, Jakob and Uvdal, Per and Grehk, T. M. and Sandell, A.},
  issn         = {0039-6028},
  keyword      = {photoelectron spectroscopy,synchrotron radiation,semiconductor-insulator interfaces,deposition,chemical vapor,silicon,high dielectrics,zirconium dioxide,X-ray absorption spectroscopy},
  language     = {eng},
  number       = {4},
  pages        = {1008--1018},
  publisher    = {Elsevier},
  series       = {Surface Science},
  title        = {Metal organic chemical vapor deposition of ultrathin ZrO2 films on Si(100) and Si(111) studied by electron spectroscopy},
  url          = {http://dx.doi.org/10.1016/j.susc.2006.11.038},
  volume       = {601},
  year         = {2007},
}