Metal organic chemical vapor deposition of ultrathin ZrO2 films on Si(100) and Si(111) studied by electron spectroscopy
(2007) In Surface Science 601(4). p.1008-1018- Abstract
- The growth of ultrathin ZrO2 films on Si(100)-(2 x 1) and Si(111)-(7 x 7) has been studied with core level photoelectron spectroscopy and X-ray absorption spectroscopy. The films were deposited sequentially by chemical vapor deposition in ultra-high vacuum using zirconium tetra-tert-butoxide as precursor. Deposition of a > 50 angstrom thick film leads in both cases to tetragonal ZrO2 (t-ZrO2), whereas significant differences are found for thinner films. On Si(111)-(7 x 7) the local structure of t-ZrO2 is not observed until a film thickness of 51 angstrom is reached. On Si(100)-(2 x 1) the local geometric structure of t-ZrO2 is formed already at a film thickness of 11 angstrom. The higher tendency for the formation of t-ZrO2 on Si(100)... (More)
- The growth of ultrathin ZrO2 films on Si(100)-(2 x 1) and Si(111)-(7 x 7) has been studied with core level photoelectron spectroscopy and X-ray absorption spectroscopy. The films were deposited sequentially by chemical vapor deposition in ultra-high vacuum using zirconium tetra-tert-butoxide as precursor. Deposition of a > 50 angstrom thick film leads in both cases to tetragonal ZrO2 (t-ZrO2), whereas significant differences are found for thinner films. On Si(111)-(7 x 7) the local structure of t-ZrO2 is not observed until a film thickness of 51 angstrom is reached. On Si(100)-(2 x 1) the local geometric structure of t-ZrO2 is formed already at a film thickness of 11 angstrom. The higher tendency for the formation of t-ZrO2 on Si(100) is discussed in terms of Zr-O valence electron matching to the number of dangling bonds per surface Si atom, The Zr-O hybridization within the ZrO2 unit depends furthermore on the chemical composition of the surrounding. The precursor t-butoxy ligands undergo efficient C-O scission on Si(100), leaving carbonaceous fragments embedded in the interfacial layer. In contrast, after small deposits on Si(111) stable t-butoxy groups are found. These are consumed upon further deposition. Stable methyl and, possibly, also hydroxyl groups are found on both surfaces within a wide film thickness range. (c) 2006 Elsevier B.V. All rights reserved. (Less)
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- author
- Karlsson, P. G. ; Richter, J. H. ; Blomquist, Jakob LU ; Uvdal, Per LU ; Grehk, T. M. and Sandell, A.
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- photoelectron spectroscopy, synchrotron radiation, semiconductor-insulator interfaces, deposition, chemical vapor, silicon, high dielectrics, zirconium dioxide, X-ray absorption spectroscopy
- in
- Surface Science
- volume
- 601
- issue
- 4
- pages
- 1008 - 1018
- publisher
- Elsevier
- external identifiers
-
- wos:000245155800020
- scopus:33846796292
- ISSN
- 0039-6028
- DOI
- 10.1016/j.susc.2006.11.038
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060)
- id
- 7d3f0358-743b-46c5-a947-9f8d56513e64 (old id 669515)
- date added to LUP
- 2016-04-01 16:10:50
- date last changed
- 2022-01-28 17:50:06
@article{7d3f0358-743b-46c5-a947-9f8d56513e64,
abstract = {{The growth of ultrathin ZrO2 films on Si(100)-(2 x 1) and Si(111)-(7 x 7) has been studied with core level photoelectron spectroscopy and X-ray absorption spectroscopy. The films were deposited sequentially by chemical vapor deposition in ultra-high vacuum using zirconium tetra-tert-butoxide as precursor. Deposition of a > 50 angstrom thick film leads in both cases to tetragonal ZrO2 (t-ZrO2), whereas significant differences are found for thinner films. On Si(111)-(7 x 7) the local structure of t-ZrO2 is not observed until a film thickness of 51 angstrom is reached. On Si(100)-(2 x 1) the local geometric structure of t-ZrO2 is formed already at a film thickness of 11 angstrom. The higher tendency for the formation of t-ZrO2 on Si(100) is discussed in terms of Zr-O valence electron matching to the number of dangling bonds per surface Si atom, The Zr-O hybridization within the ZrO2 unit depends furthermore on the chemical composition of the surrounding. The precursor t-butoxy ligands undergo efficient C-O scission on Si(100), leaving carbonaceous fragments embedded in the interfacial layer. In contrast, after small deposits on Si(111) stable t-butoxy groups are found. These are consumed upon further deposition. Stable methyl and, possibly, also hydroxyl groups are found on both surfaces within a wide film thickness range. (c) 2006 Elsevier B.V. All rights reserved.}},
author = {{Karlsson, P. G. and Richter, J. H. and Blomquist, Jakob and Uvdal, Per and Grehk, T. M. and Sandell, A.}},
issn = {{0039-6028}},
keywords = {{photoelectron spectroscopy; synchrotron radiation; semiconductor-insulator interfaces; deposition; chemical vapor; silicon; high dielectrics; zirconium dioxide; X-ray absorption spectroscopy}},
language = {{eng}},
number = {{4}},
pages = {{1008--1018}},
publisher = {{Elsevier}},
series = {{Surface Science}},
title = {{Metal organic chemical vapor deposition of ultrathin ZrO2 films on Si(100) and Si(111) studied by electron spectroscopy}},
url = {{http://dx.doi.org/10.1016/j.susc.2006.11.038}},
doi = {{10.1016/j.susc.2006.11.038}},
volume = {{601}},
year = {{2007}},
}