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A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI

Din, Imad Ud LU ; Andersson, Stefan ; Forsberg, Therese LU and Sjöland, Henrik LU (2018) 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) p.1-4
Abstract (Swedish)
A three stacked power amplifier implemented in 28nm fully depleted silicon-on- insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point of 16.2dBm. It occupies a silicon area of 0.4 mm 2 , uses a supply voltage of 3V, and has a 3.3GHz 1-dB bandwidth at 24GHz.
Abstract
A three stacked power amplifier implemented in 28nm fully depleted silicon-on-insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point of 16.2dBm. It occupies a silicon area of 0.4 mm 2 , uses a supply voltage of 3V, and has a 3.3GHz 1-dB bandwidth at 24GHz.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
pages
4 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
conference location
Tallin, Estonia
conference dates
2018-10-30 - 2018-10-31
external identifiers
  • scopus:85060617652
ISBN
978-1-5386-7657-8
978-1-5386-7656-1
DOI
10.1109/NORCHIP.2018.8573450
language
English
LU publication?
yes
id
66d1edbf-21eb-466b-8e81-be273e1adea6
date added to LUP
2019-02-24 01:30:08
date last changed
2019-03-05 04:36:04
@inproceedings{66d1edbf-21eb-466b-8e81-be273e1adea6,
  abstract     = {A three stacked power amplifier implemented in 28nm fully depleted silicon-on-insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point of 16.2dBm. It occupies a silicon area of 0.4 mm 2 , uses a supply voltage of 3V, and has a 3.3GHz 1-dB bandwidth at 24GHz.},
  author       = {Din, Imad Ud and Andersson, Stefan  and Forsberg, Therese and Sjöland, Henrik},
  isbn         = {978-1-5386-7657-8},
  language     = {eng},
  location     = {Tallin, Estonia},
  month        = {10},
  pages        = {1--4},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI},
  url          = {http://dx.doi.org/10.1109/NORCHIP.2018.8573450},
  year         = {2018},
}