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Oxygen loss and thermal double donor formation in germanium

Litvinov, V V ; Murin, L I ; Markevich, V P ; Peaker, A R and Lindström, Lennart LU (2006) In Materials Science in Semiconductor Processing 9(4-5). p.619-624
Abstract
Kinetics of interstitial oxygen loss and oxygen-related thermal double donor (TDD) generation upon heat treatments of Ge:O crystals at 350 degrees C have been studied. The TDD concentration (N-TDD) was derived from Hall effect measurements in the temperature range 77-400 K. The bistability of the first TDD species was taken into account. The interstitial oxygen concentration ([O-i]) in the crystals was determined from measurements of the intensity of the infrared absorption band at 855 cm(-1) at room temperature with the use of a recently obtained calibration coefficient Co = 1.05 x 10(17) cm(-2). From an analysis of the [O-i](t) and N-TDD(t) kinetics a confirmation of recent suggestions about faster diffusivity of small oxygen clusters... (More)
Kinetics of interstitial oxygen loss and oxygen-related thermal double donor (TDD) generation upon heat treatments of Ge:O crystals at 350 degrees C have been studied. The TDD concentration (N-TDD) was derived from Hall effect measurements in the temperature range 77-400 K. The bistability of the first TDD species was taken into account. The interstitial oxygen concentration ([O-i]) in the crystals was determined from measurements of the intensity of the infrared absorption band at 855 cm(-1) at room temperature with the use of a recently obtained calibration coefficient Co = 1.05 x 10(17) cm(-2). From an analysis of the [O-i](t) and N-TDD(t) kinetics a confirmation of recent suggestions about faster diffusivity of small oxygen clusters compared to the diffusivity of single interstitial oxygen atoms was obtained. Average numbers (N) of oxygen atoms lost per TDD species created, N = Delta[O-i]/N-TDD, were calculated at different stages of the TDD generation. The obtained values of N are consistent with those expected in accordance with the recent models of the TDD structure. In particular, an average number of oxygen atoms per TDD species was about 5 at initial stages of the heat treatment when the first members (the TDD2 and TDD3 species) of the TDD family were dominant. N was found to be about 10 after extended anneals at 350 degrees C when the TDD6 and TDD7 species were dominant. (Less)
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
germanium, oxygen, thermal donors
in
Materials Science in Semiconductor Processing
volume
9
issue
4-5
pages
619 - 624
publisher
Elsevier
external identifiers
  • wos:000243574100036
  • scopus:33845212300
ISSN
1369-8001
DOI
10.1016/j.mssp.2006.08.011
language
English
LU publication?
yes
id
012c72f7-1a19-4daf-810f-e5ab9c6d2272 (old id 677287)
date added to LUP
2016-04-01 15:53:43
date last changed
2021-02-17 05:14:57
@article{012c72f7-1a19-4daf-810f-e5ab9c6d2272,
  abstract     = {Kinetics of interstitial oxygen loss and oxygen-related thermal double donor (TDD) generation upon heat treatments of Ge:O crystals at 350 degrees C have been studied. The TDD concentration (N-TDD) was derived from Hall effect measurements in the temperature range 77-400 K. The bistability of the first TDD species was taken into account. The interstitial oxygen concentration ([O-i]) in the crystals was determined from measurements of the intensity of the infrared absorption band at 855 cm(-1) at room temperature with the use of a recently obtained calibration coefficient Co = 1.05 x 10(17) cm(-2). From an analysis of the [O-i](t) and N-TDD(t) kinetics a confirmation of recent suggestions about faster diffusivity of small oxygen clusters compared to the diffusivity of single interstitial oxygen atoms was obtained. Average numbers (N) of oxygen atoms lost per TDD species created, N = Delta[O-i]/N-TDD, were calculated at different stages of the TDD generation. The obtained values of N are consistent with those expected in accordance with the recent models of the TDD structure. In particular, an average number of oxygen atoms per TDD species was about 5 at initial stages of the heat treatment when the first members (the TDD2 and TDD3 species) of the TDD family were dominant. N was found to be about 10 after extended anneals at 350 degrees C when the TDD6 and TDD7 species were dominant.},
  author       = {Litvinov, V V and Murin, L I and Markevich, V P and Peaker, A R and Lindström, Lennart},
  issn         = {1369-8001},
  language     = {eng},
  number       = {4-5},
  pages        = {619--624},
  publisher    = {Elsevier},
  series       = {Materials Science in Semiconductor Processing},
  title        = {Oxygen loss and thermal double donor formation in germanium},
  url          = {http://dx.doi.org/10.1016/j.mssp.2006.08.011},
  doi          = {10.1016/j.mssp.2006.08.011},
  volume       = {9},
  year         = {2006},
}