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Double oxidation scheme for tunnel junction fabrication

Holmqvist, T. LU ; Meschke, M. and Pekola, J. P. (2008) In Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26(1). p.28-31
Abstract

The authors report a method to achieve Al-Al Ox -Al tunnel junctions with high specific resistance in a controlled manner using a double oxidation technique. The technique is based on the standard method for oxidation repeated on an additional Al layer. The tunnel junctions were characterized with standard methods, such as comparison of room temperature resistance with liquid helium resistance and the authors found them to be of comparable quality to junctions fabricated with standard single oxidation. Fitting with the Simmons model suggests that both the barrier width and barrier height are consistent with those obtained in a single oxidation step. The junction specific capacitance was determined at low temperature to be 68 fFμ m2.... (More)

The authors report a method to achieve Al-Al Ox -Al tunnel junctions with high specific resistance in a controlled manner using a double oxidation technique. The technique is based on the standard method for oxidation repeated on an additional Al layer. The tunnel junctions were characterized with standard methods, such as comparison of room temperature resistance with liquid helium resistance and the authors found them to be of comparable quality to junctions fabricated with standard single oxidation. Fitting with the Simmons model suggests that both the barrier width and barrier height are consistent with those obtained in a single oxidation step. The junction specific capacitance was determined at low temperature to be 68 fFμ m2. These junctions, employed in low temperature measurements and applications, demonstrate expected and stable conductance characteristics. The double oxidation method is straightforward to implement in a basic setup for tunnel junction fabrication.

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author
publishing date
type
Contribution to journal
publication status
published
in
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
volume
26
issue
1
pages
4 pages
publisher
American Institute of Physics
external identifiers
  • scopus:38849088877
ISSN
1071-1023
DOI
10.1116/1.2817629
language
English
LU publication?
no
id
67853858-3a24-4a05-a8f2-3354a926928a
date added to LUP
2017-10-04 14:24:11
date last changed
2017-10-08 10:43:17
@article{67853858-3a24-4a05-a8f2-3354a926928a,
  abstract     = {<p>The authors report a method to achieve Al-Al Ox -Al tunnel junctions with high specific resistance in a controlled manner using a double oxidation technique. The technique is based on the standard method for oxidation repeated on an additional Al layer. The tunnel junctions were characterized with standard methods, such as comparison of room temperature resistance with liquid helium resistance and the authors found them to be of comparable quality to junctions fabricated with standard single oxidation. Fitting with the Simmons model suggests that both the barrier width and barrier height are consistent with those obtained in a single oxidation step. The junction specific capacitance was determined at low temperature to be 68 fFμ m2. These junctions, employed in low temperature measurements and applications, demonstrate expected and stable conductance characteristics. The double oxidation method is straightforward to implement in a basic setup for tunnel junction fabrication.</p>},
  author       = {Holmqvist, T. and Meschke, M. and Pekola, J. P.},
  issn         = {1071-1023},
  language     = {eng},
  number       = {1},
  pages        = {28--31},
  publisher    = {American Institute of Physics},
  series       = {Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures},
  title        = {Double oxidation scheme for tunnel junction fabrication},
  url          = {http://dx.doi.org/10.1116/1.2817629},
  volume       = {26},
  year         = {2008},
}