Double oxidation scheme for tunnel junction fabrication
(2008) In Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26(1). p.28-31- Abstract
The authors report a method to achieve Al-Al Ox -Al tunnel junctions with high specific resistance in a controlled manner using a double oxidation technique. The technique is based on the standard method for oxidation repeated on an additional Al layer. The tunnel junctions were characterized with standard methods, such as comparison of room temperature resistance with liquid helium resistance and the authors found them to be of comparable quality to junctions fabricated with standard single oxidation. Fitting with the Simmons model suggests that both the barrier width and barrier height are consistent with those obtained in a single oxidation step. The junction specific capacitance was determined at low temperature to be 68 fFμ m2.... (More)
The authors report a method to achieve Al-Al Ox -Al tunnel junctions with high specific resistance in a controlled manner using a double oxidation technique. The technique is based on the standard method for oxidation repeated on an additional Al layer. The tunnel junctions were characterized with standard methods, such as comparison of room temperature resistance with liquid helium resistance and the authors found them to be of comparable quality to junctions fabricated with standard single oxidation. Fitting with the Simmons model suggests that both the barrier width and barrier height are consistent with those obtained in a single oxidation step. The junction specific capacitance was determined at low temperature to be 68 fFμ m2. These junctions, employed in low temperature measurements and applications, demonstrate expected and stable conductance characteristics. The double oxidation method is straightforward to implement in a basic setup for tunnel junction fabrication.
(Less)
- author
- Holmqvist, T. LU ; Meschke, M. and Pekola, J. P.
- publishing date
- 2008
- type
- Contribution to journal
- publication status
- published
- in
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
- volume
- 26
- issue
- 1
- pages
- 4 pages
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:38849088877
- ISSN
- 1071-1023
- DOI
- 10.1116/1.2817629
- language
- English
- LU publication?
- no
- id
- 67853858-3a24-4a05-a8f2-3354a926928a
- date added to LUP
- 2017-10-04 14:24:11
- date last changed
- 2022-01-30 23:08:12
@article{67853858-3a24-4a05-a8f2-3354a926928a,
abstract = {{<p>The authors report a method to achieve Al-Al Ox -Al tunnel junctions with high specific resistance in a controlled manner using a double oxidation technique. The technique is based on the standard method for oxidation repeated on an additional Al layer. The tunnel junctions were characterized with standard methods, such as comparison of room temperature resistance with liquid helium resistance and the authors found them to be of comparable quality to junctions fabricated with standard single oxidation. Fitting with the Simmons model suggests that both the barrier width and barrier height are consistent with those obtained in a single oxidation step. The junction specific capacitance was determined at low temperature to be 68 fFμ m2. These junctions, employed in low temperature measurements and applications, demonstrate expected and stable conductance characteristics. The double oxidation method is straightforward to implement in a basic setup for tunnel junction fabrication.</p>}},
author = {{Holmqvist, T. and Meschke, M. and Pekola, J. P.}},
issn = {{1071-1023}},
language = {{eng}},
number = {{1}},
pages = {{28--31}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures}},
title = {{Double oxidation scheme for tunnel junction fabrication}},
url = {{http://dx.doi.org/10.1116/1.2817629}},
doi = {{10.1116/1.2817629}},
volume = {{26}},
year = {{2008}},
}