Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies
(2006) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 253(1-2). p.210-213- Abstract
- The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 degrees C steps for 30 min at each temperature) in electron irradiated Si crystals has been studied by means of local vibrational mode (LVM) spectroscopy. A complicated annealing behaviour of the LVMs related to the C4 (ICiOi) defect has been observed. At about 200 degrees C the bands at 940 and 1024 cm(-1) are transformed into three new LVM bands at 724 cm(-1) (O-related) and at 952 and 973 cm(-1) (both C-related). Further increase in annealing temperature up to 250-275 degrees C results in a transformation of the latter bands into a new set of LVM bands at 969 cm(-1) (O-related) and at 951 and 977 cm(-1) (both C-related). These bands... (More)
- The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 degrees C steps for 30 min at each temperature) in electron irradiated Si crystals has been studied by means of local vibrational mode (LVM) spectroscopy. A complicated annealing behaviour of the LVMs related to the C4 (ICiOi) defect has been observed. At about 200 degrees C the bands at 940 and 1024 cm(-1) are transformed into three new LVM bands at 724 cm(-1) (O-related) and at 952 and 973 cm(-1) (both C-related). Further increase in annealing temperature up to 250-275 degrees C results in a transformation of the latter bands into a new set of LVM bands at 969 cm(-1) (O-related) and at 951 and 977 cm(-1) (both C-related). These bands disappear at about 300-325 C. It is suggested that all the above-mentioned LVMs arise from the C4 defect being in different configurations. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/679913
- author
- Murin, L. I. ; Lindström, Lennart LU ; Davies, G. and Markevich, V. P.
- organization
- publishing date
- 2006
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- vibrational modes, oxygen, carbon, silicon, irradiation
- in
- Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
- volume
- 253
- issue
- 1-2
- pages
- 210 - 213
- publisher
- Elsevier
- external identifiers
-
- wos:000243178600043
- scopus:33751307984
- ISSN
- 0168-583X
- DOI
- 10.1016/j.nimb.2006.10.029
- language
- English
- LU publication?
- yes
- id
- fe4b3a92-f7dd-4251-9f5a-49e8a7c34d9c (old id 679913)
- date added to LUP
- 2016-04-01 17:05:00
- date last changed
- 2022-01-29 00:12:02
@article{fe4b3a92-f7dd-4251-9f5a-49e8a7c34d9c,
abstract = {{The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 degrees C steps for 30 min at each temperature) in electron irradiated Si crystals has been studied by means of local vibrational mode (LVM) spectroscopy. A complicated annealing behaviour of the LVMs related to the C4 (ICiOi) defect has been observed. At about 200 degrees C the bands at 940 and 1024 cm(-1) are transformed into three new LVM bands at 724 cm(-1) (O-related) and at 952 and 973 cm(-1) (both C-related). Further increase in annealing temperature up to 250-275 degrees C results in a transformation of the latter bands into a new set of LVM bands at 969 cm(-1) (O-related) and at 951 and 977 cm(-1) (both C-related). These bands disappear at about 300-325 C. It is suggested that all the above-mentioned LVMs arise from the C4 defect being in different configurations.}},
author = {{Murin, L. I. and Lindström, Lennart and Davies, G. and Markevich, V. P.}},
issn = {{0168-583X}},
keywords = {{vibrational modes; oxygen; carbon; silicon; irradiation}},
language = {{eng}},
number = {{1-2}},
pages = {{210--213}},
publisher = {{Elsevier}},
series = {{Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms}},
title = {{Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies}},
url = {{http://dx.doi.org/10.1016/j.nimb.2006.10.029}},
doi = {{10.1016/j.nimb.2006.10.029}},
volume = {{253}},
year = {{2006}},
}