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Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies

Murin, L. I. ; Lindström, Lennart LU ; Davies, G. and Markevich, V. P. (2006) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 253(1-2). p.210-213
Abstract
The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 degrees C steps for 30 min at each temperature) in electron irradiated Si crystals has been studied by means of local vibrational mode (LVM) spectroscopy. A complicated annealing behaviour of the LVMs related to the C4 (ICiOi) defect has been observed. At about 200 degrees C the bands at 940 and 1024 cm(-1) are transformed into three new LVM bands at 724 cm(-1) (O-related) and at 952 and 973 cm(-1) (both C-related). Further increase in annealing temperature up to 250-275 degrees C results in a transformation of the latter bands into a new set of LVM bands at 969 cm(-1) (O-related) and at 951 and 977 cm(-1) (both C-related). These bands... (More)
The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 degrees C steps for 30 min at each temperature) in electron irradiated Si crystals has been studied by means of local vibrational mode (LVM) spectroscopy. A complicated annealing behaviour of the LVMs related to the C4 (ICiOi) defect has been observed. At about 200 degrees C the bands at 940 and 1024 cm(-1) are transformed into three new LVM bands at 724 cm(-1) (O-related) and at 952 and 973 cm(-1) (both C-related). Further increase in annealing temperature up to 250-275 degrees C results in a transformation of the latter bands into a new set of LVM bands at 969 cm(-1) (O-related) and at 951 and 977 cm(-1) (both C-related). These bands disappear at about 300-325 C. It is suggested that all the above-mentioned LVMs arise from the C4 defect being in different configurations. (Less)
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
vibrational modes, oxygen, carbon, silicon, irradiation
in
Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
volume
253
issue
1-2
pages
210 - 213
publisher
Elsevier
external identifiers
  • wos:000243178600043
  • scopus:33751307984
ISSN
0168-583X
DOI
10.1016/j.nimb.2006.10.029
language
English
LU publication?
yes
id
fe4b3a92-f7dd-4251-9f5a-49e8a7c34d9c (old id 679913)
date added to LUP
2016-04-01 17:05:00
date last changed
2021-09-29 04:09:17
@article{fe4b3a92-f7dd-4251-9f5a-49e8a7c34d9c,
  abstract     = {The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 degrees C steps for 30 min at each temperature) in electron irradiated Si crystals has been studied by means of local vibrational mode (LVM) spectroscopy. A complicated annealing behaviour of the LVMs related to the C4 (ICiOi) defect has been observed. At about 200 degrees C the bands at 940 and 1024 cm(-1) are transformed into three new LVM bands at 724 cm(-1) (O-related) and at 952 and 973 cm(-1) (both C-related). Further increase in annealing temperature up to 250-275 degrees C results in a transformation of the latter bands into a new set of LVM bands at 969 cm(-1) (O-related) and at 951 and 977 cm(-1) (both C-related). These bands disappear at about 300-325 C. It is suggested that all the above-mentioned LVMs arise from the C4 defect being in different configurations.},
  author       = {Murin, L. I. and Lindström, Lennart and Davies, G. and Markevich, V. P.},
  issn         = {0168-583X},
  language     = {eng},
  number       = {1-2},
  pages        = {210--213},
  publisher    = {Elsevier},
  series       = {Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms},
  title        = {Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies},
  url          = {http://dx.doi.org/10.1016/j.nimb.2006.10.029},
  doi          = {10.1016/j.nimb.2006.10.029},
  volume       = {253},
  year         = {2006},
}