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Simultaneous Optical and Electrical Characterization of GaN Nanowire Arrays by Means of Vis-IR Spectroscopic Ellipsometry

Santos, Antonio J. ; Lacroix, Bertrand ; Blanco, Eduardo ; Hurand, Simon ; Gómez, Víctor J. LU orcid ; Paumier, Fabien ; Girardeau, Thierry ; Huffaker, Diana L. ; García, Rafael and Morales, Francisco M. (2020) In Journal of Physical Chemistry C 124(2). p.1535-1543
Abstract

We report an original and straightforward method for both optical and electrical characterization of vertical GaN nanowire arrays epitaxially grown on silicon through visible-infrared spectroscopic ellipsometry methods. For the initial purpose of adding new inputs to the ellipsometry model, focused ion-beam tomography experiments were conducted to extract porosity/depth profiles of these systems. To reproduce the optical free-carrier behavior in the infrared, the ellipsometric data acquired were fitted to an anisotropic Bruggeman model including Tauc-Lorentz and Drude oscillators, which enabled the determination of carrier density and in-grain mobility. The nice agreement of these results with those obtained by combining Hall effect... (More)

We report an original and straightforward method for both optical and electrical characterization of vertical GaN nanowire arrays epitaxially grown on silicon through visible-infrared spectroscopic ellipsometry methods. For the initial purpose of adding new inputs to the ellipsometry model, focused ion-beam tomography experiments were conducted to extract porosity/depth profiles of these systems. To reproduce the optical free-carrier behavior in the infrared, the ellipsometric data acquired were fitted to an anisotropic Bruggeman model including Tauc-Lorentz and Drude oscillators, which enabled the determination of carrier density and in-grain mobility. The nice agreement of these results with those obtained by combining Hall effect measurements, X-ray diffraction, and transmission electron microscopy studies supported the validity of the proposed method, opening new horizons in the characterization of nanowire-based semiconducting layers.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Physical Chemistry C
volume
124
issue
2
pages
9 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85078447720
ISSN
1932-7447
DOI
10.1021/acs.jpcc.9b10556
language
English
LU publication?
yes
id
683ff22c-e011-4159-a65b-a744a2eeed75
date added to LUP
2021-01-07 12:01:13
date last changed
2023-11-20 19:20:47
@article{683ff22c-e011-4159-a65b-a744a2eeed75,
  abstract     = {{<p>We report an original and straightforward method for both optical and electrical characterization of vertical GaN nanowire arrays epitaxially grown on silicon through visible-infrared spectroscopic ellipsometry methods. For the initial purpose of adding new inputs to the ellipsometry model, focused ion-beam tomography experiments were conducted to extract porosity/depth profiles of these systems. To reproduce the optical free-carrier behavior in the infrared, the ellipsometric data acquired were fitted to an anisotropic Bruggeman model including Tauc-Lorentz and Drude oscillators, which enabled the determination of carrier density and in-grain mobility. The nice agreement of these results with those obtained by combining Hall effect measurements, X-ray diffraction, and transmission electron microscopy studies supported the validity of the proposed method, opening new horizons in the characterization of nanowire-based semiconducting layers.</p>}},
  author       = {{Santos, Antonio J. and Lacroix, Bertrand and Blanco, Eduardo and Hurand, Simon and Gómez, Víctor J. and Paumier, Fabien and Girardeau, Thierry and Huffaker, Diana L. and García, Rafael and Morales, Francisco M.}},
  issn         = {{1932-7447}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{1535--1543}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Journal of Physical Chemistry C}},
  title        = {{Simultaneous Optical and Electrical Characterization of GaN Nanowire Arrays by Means of Vis-IR Spectroscopic Ellipsometry}},
  url          = {{http://dx.doi.org/10.1021/acs.jpcc.9b10556}},
  doi          = {{10.1021/acs.jpcc.9b10556}},
  volume       = {{124}},
  year         = {{2020}},
}