Excitonic Dynamics at the Type-II Polytype Interface of InP Platelets
Jash, Asmita LU ; Lehmann, Sebastian LU ; Dick, Kimberly A. LU ; Gustafsson, Anders LU
and Pistol, Mats-erik
LU
(2023)
In ACS Photonics
10(9).
p.3143-3148
- Abstract
- Indirect excitons are the focus of intense research due to the opportunity of studying degenerate quantum gases and liquids in an excitonic system. To realize such systems, it is highly advantageous to have as little scattering as possible. A polytype type-II interface is formed between wurtzite and zincblende InP due to the band alignment. Electrons gather on the zincblende and holes on the wurtzite side of the interface. Therefore, electrons and holes that are spatially separated by the interface form indirect excitons with aligned dipoles. This polytype type-II interface is perfectly flat, which limits scattering. Here we report that repulsive interaction between the indirect excitons is the driving force behind the long-range transport... (More)
- Indirect excitons are the focus of intense research due to the opportunity of studying degenerate quantum gases and liquids in an excitonic system. To realize such systems, it is highly advantageous to have as little scattering as possible. A polytype type-II interface is formed between wurtzite and zincblende InP due to the band alignment. Electrons gather on the zincblende and holes on the wurtzite side of the interface. Therefore, electrons and holes that are spatially separated by the interface form indirect excitons with aligned dipoles. This polytype type-II interface is perfectly flat, which limits scattering. Here we report that repulsive interaction between the indirect excitons is the driving force behind the long-range transport of indirect excitons along the interface at high exciton densities. This is indicative of less scattering than in conventional type-II heterostructures. The spatial separation of the charge carriers across the interface leads to a low recombination rate of the indirect excitons since the overlap of the electron-hole wavefunction at the interface is small. Emission from the long-lived indirect excitons can be detected even after 40 μs. Our studies have been performed by using spatially and temporally resolved photoluminescence at the low temperature. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/684972ab-1fee-467f-9dfb-722fb37a3cf3
- author
- Jash, Asmita
LU
; Lehmann, Sebastian
LU
; Dick, Kimberly A.
LU
; Gustafsson, Anders
LU
and Pistol, Mats-erik
LU
- organization
- publishing date
- 2023-09-20
- type
- Contribution to journal
- publication status
- published
- subject
- in
- ACS Photonics
- volume
- 10
- issue
- 9
- pages
- 6 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85168526516
- ISSN
- 2330-4022
- DOI
- 10.1021/acsphotonics.3c00517
- language
- English
- LU publication?
- yes
- id
- 684972ab-1fee-467f-9dfb-722fb37a3cf3
- date added to LUP
- 2023-10-25 07:53:39
- date last changed
- 2024-02-18 21:21:19
@article{684972ab-1fee-467f-9dfb-722fb37a3cf3,
abstract = {{Indirect excitons are the focus of intense research due to the opportunity of studying degenerate quantum gases and liquids in an excitonic system. To realize such systems, it is highly advantageous to have as little scattering as possible. A polytype type-II interface is formed between wurtzite and zincblende InP due to the band alignment. Electrons gather on the zincblende and holes on the wurtzite side of the interface. Therefore, electrons and holes that are spatially separated by the interface form indirect excitons with aligned dipoles. This polytype type-II interface is perfectly flat, which limits scattering. Here we report that repulsive interaction between the indirect excitons is the driving force behind the long-range transport of indirect excitons along the interface at high exciton densities. This is indicative of less scattering than in conventional type-II heterostructures. The spatial separation of the charge carriers across the interface leads to a low recombination rate of the indirect excitons since the overlap of the electron-hole wavefunction at the interface is small. Emission from the long-lived indirect excitons can be detected even after 40 μs. Our studies have been performed by using spatially and temporally resolved photoluminescence at the low temperature.}},
author = {{Jash, Asmita and Lehmann, Sebastian and Dick, Kimberly A. and Gustafsson, Anders and Pistol, Mats-erik}},
issn = {{2330-4022}},
language = {{eng}},
month = {{09}},
number = {{9}},
pages = {{3143--3148}},
publisher = {{The American Chemical Society (ACS)}},
series = {{ACS Photonics}},
title = {{Excitonic Dynamics at the Type-II Polytype Interface of InP Platelets}},
url = {{http://dx.doi.org/10.1021/acsphotonics.3c00517}},
doi = {{10.1021/acsphotonics.3c00517}},
volume = {{10}},
year = {{2023}},
}