Effects of bulk inversion asymmetry and low interface symmetry on the optical properties of broken-gap heterostructures
(2007) In Physical Review B (Condensed Matter and Materials Physics) 76(3).- Abstract
- We have studied the influence of bulk inversion asymmetry (BIA) and the relativistic part of the low-symmetry interface Hamiltonian (IH) on intersubband optical transitions, induced by linearly polarized light, between strongly hybridized electron-hole states in asymmetrical InAs/GaSb broken-gap quantum wells grown along the [001] direction. The self-consistent calculations were performed using the Burt-Foreman envelope function theory and a sophisticated eight-band k center dot p model Hamiltonian. We found that the BIA and the IH can activate originally forbidden spin-flip optical transitions, and that the strength of the corresponding optical matrix elements depends on the light polarization direction and the quasiparticle in-plane wave... (More)
- We have studied the influence of bulk inversion asymmetry (BIA) and the relativistic part of the low-symmetry interface Hamiltonian (IH) on intersubband optical transitions, induced by linearly polarized light, between strongly hybridized electron-hole states in asymmetrical InAs/GaSb broken-gap quantum wells grown along the [001] direction. The self-consistent calculations were performed using the Burt-Foreman envelope function theory and a sophisticated eight-band k center dot p model Hamiltonian. We found that the BIA and the IH can activate originally forbidden spin-flip optical transitions, and that the strength of the corresponding optical matrix elements depends on the light polarization direction and the quasiparticle in-plane wave vector. Both the BIA and the IH contribute significantly to this effect. When the initial electron-hole states are strongly hybridized, the spin-flip optical transition probability can be of the same order as the probability of the spin-conserved transitions. The BIA results in interface-localized terms in the optical matrix elements due to the material-dependent Kane's B parameter and produces a strong in-plane anisotropy in the absorption of light polarized along the [11] and [1 (1) over bar] directions. The IH also contributes to this effect. We found that the primary contribution to the optical anisotropy comes from the BIA-induced mechanism. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/691358
- author
- Semenikhin, I. ; Zakharova, A. ; Nilsson, Kristina LU and Chao, Koung-An LU
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 76
- issue
- 3
- publisher
- American Physical Society
- external identifiers
-
- wos:000248500800110
- scopus:34547506665
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.76.035335
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Mathematical Physics (Faculty of Science) (011040001), Department of Physics (011013000), Theoretical Chemistry (S) (011001039)
- id
- ccb7352f-7aa6-4e3b-8d1a-56fac7387ff0 (old id 691358)
- date added to LUP
- 2016-04-01 16:08:29
- date last changed
- 2023-01-04 21:37:29
@article{ccb7352f-7aa6-4e3b-8d1a-56fac7387ff0,
abstract = {{We have studied the influence of bulk inversion asymmetry (BIA) and the relativistic part of the low-symmetry interface Hamiltonian (IH) on intersubband optical transitions, induced by linearly polarized light, between strongly hybridized electron-hole states in asymmetrical InAs/GaSb broken-gap quantum wells grown along the [001] direction. The self-consistent calculations were performed using the Burt-Foreman envelope function theory and a sophisticated eight-band k center dot p model Hamiltonian. We found that the BIA and the IH can activate originally forbidden spin-flip optical transitions, and that the strength of the corresponding optical matrix elements depends on the light polarization direction and the quasiparticle in-plane wave vector. Both the BIA and the IH contribute significantly to this effect. When the initial electron-hole states are strongly hybridized, the spin-flip optical transition probability can be of the same order as the probability of the spin-conserved transitions. The BIA results in interface-localized terms in the optical matrix elements due to the material-dependent Kane's B parameter and produces a strong in-plane anisotropy in the absorption of light polarized along the [11] and [1 (1) over bar] directions. The IH also contributes to this effect. We found that the primary contribution to the optical anisotropy comes from the BIA-induced mechanism.}},
author = {{Semenikhin, I. and Zakharova, A. and Nilsson, Kristina and Chao, Koung-An}},
issn = {{1098-0121}},
language = {{eng}},
number = {{3}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Effects of bulk inversion asymmetry and low interface symmetry on the optical properties of broken-gap heterostructures}},
url = {{http://dx.doi.org/10.1103/PhysRevB.76.035335}},
doi = {{10.1103/PhysRevB.76.035335}},
volume = {{76}},
year = {{2007}},
}