Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices
(2022) In ACS Applied Nano Materials 5(3). p.3177-3182- Abstract
Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process with a poly(methyl methacrylate) resist based on the nonpolar solvents o-xylene, hexane, and toluene. Features down to 50 nm size are created, and photoluminescence of CsPbBr3 nanowires exhibits no degradation. We fabricate metal contacts to single CsPbBr3 nanowires, which show a strong photoresponsivity of 0.29 A W-1. The presented method is an excellent tool for nanoscale MHP science and technology, allowing for the fabrication of complex nanostructures.
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https://lup.lub.lu.se/record/6a02ab52-0910-443d-8fa6-d4214257ce87
- author
- Lamers, Nils LU ; Zhang, Zhaojun LU and Wallentin, Jesper LU
- organization
- publishing date
- 2022-03-25
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- CsPbBr, electron-beam lithography, nanowire, patterning, perovskite
- in
- ACS Applied Nano Materials
- volume
- 5
- issue
- 3
- pages
- 6 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:35372798
- scopus:85125646996
- ISSN
- 2574-0970
- DOI
- 10.1021/acsanm.2c00188
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 2022 The Authors. Published by American Chemical Society.
- id
- 6a02ab52-0910-443d-8fa6-d4214257ce87
- date added to LUP
- 2022-03-17 12:33:49
- date last changed
- 2024-09-19 20:45:55
@article{6a02ab52-0910-443d-8fa6-d4214257ce87, abstract = {{<p>Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process with a poly(methyl methacrylate) resist based on the nonpolar solvents o-xylene, hexane, and toluene. Features down to 50 nm size are created, and photoluminescence of CsPbBr3 nanowires exhibits no degradation. We fabricate metal contacts to single CsPbBr3 nanowires, which show a strong photoresponsivity of 0.29 A W-1. The presented method is an excellent tool for nanoscale MHP science and technology, allowing for the fabrication of complex nanostructures.</p>}}, author = {{Lamers, Nils and Zhang, Zhaojun and Wallentin, Jesper}}, issn = {{2574-0970}}, keywords = {{CsPbBr; electron-beam lithography; nanowire; patterning; perovskite}}, language = {{eng}}, month = {{03}}, number = {{3}}, pages = {{3177--3182}}, publisher = {{The American Chemical Society (ACS)}}, series = {{ACS Applied Nano Materials}}, title = {{Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices}}, url = {{http://dx.doi.org/10.1021/acsanm.2c00188}}, doi = {{10.1021/acsanm.2c00188}}, volume = {{5}}, year = {{2022}}, }