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Continuous wafer-scale graphene on cubic-SiC(001)

Chaika, Alexander N.; Molodtsova, Olga V.; Zakharov, Alexei LU ; Marchenko, Dmitry; Sanchez-Barriga, Jaime; Varykhalov, Andrei; Shvets, Igor V. and Aristov, Victor Yu. (2013) In Nano Reseach 6(8). p.562-570
Abstract
The atomic and electronic structure of graphene synthesized on commercially available cubic-SiC(001)/Si(001) wafers have been studied by low energy electron microscopy (LEEM), scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and angle resolved photoelectron spectroscopy (ARPES). LEEM and STM data prove the wafer-scale continuity and uniform thickness of the graphene overlayer on SiC(001). LEEM, STM and ARPES studies reveal that the graphene overlayer on SiC(001) consists of only a few monolayers with physical properties of quasi-freestanding graphene. Atomically resolved STM and micro-LEED data show that the top graphene layer consists of nanometersized domains with four different lattice orientations connected... (More)
The atomic and electronic structure of graphene synthesized on commercially available cubic-SiC(001)/Si(001) wafers have been studied by low energy electron microscopy (LEEM), scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and angle resolved photoelectron spectroscopy (ARPES). LEEM and STM data prove the wafer-scale continuity and uniform thickness of the graphene overlayer on SiC(001). LEEM, STM and ARPES studies reveal that the graphene overlayer on SiC(001) consists of only a few monolayers with physical properties of quasi-freestanding graphene. Atomically resolved STM and micro-LEED data show that the top graphene layer consists of nanometersized domains with four different lattice orientations connected through the aOE (c) 110 >-directed boundaries. ARPES studies reveal the typical electron spectrum of graphene with the Dirac points close to the Fermi level. Thus, the use of technologically relevant SiC(001)/Si(001) wafers for graphene fabrication represents a realistic way of bridging the gap between the outstanding properties of graphene and their applications. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
graphene, cubic-SiC(001), STM, ARPES, LEEM, LEED
in
Nano Reseach
volume
6
issue
8
pages
562 - 570
publisher
Springer
external identifiers
  • wos:000322739900002
  • scopus:84881060531
ISSN
1998-0124
DOI
10.1007/s12274-013-0331-9
language
English
LU publication?
yes
id
6e80a10a-8c96-40d3-a10e-3c44d0782bf1 (old id 4042864)
date added to LUP
2013-10-07 16:33:50
date last changed
2019-04-02 01:22:44
@article{6e80a10a-8c96-40d3-a10e-3c44d0782bf1,
  abstract     = {The atomic and electronic structure of graphene synthesized on commercially available cubic-SiC(001)/Si(001) wafers have been studied by low energy electron microscopy (LEEM), scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and angle resolved photoelectron spectroscopy (ARPES). LEEM and STM data prove the wafer-scale continuity and uniform thickness of the graphene overlayer on SiC(001). LEEM, STM and ARPES studies reveal that the graphene overlayer on SiC(001) consists of only a few monolayers with physical properties of quasi-freestanding graphene. Atomically resolved STM and micro-LEED data show that the top graphene layer consists of nanometersized domains with four different lattice orientations connected through the aOE (c) 110 >-directed boundaries. ARPES studies reveal the typical electron spectrum of graphene with the Dirac points close to the Fermi level. Thus, the use of technologically relevant SiC(001)/Si(001) wafers for graphene fabrication represents a realistic way of bridging the gap between the outstanding properties of graphene and their applications.},
  author       = {Chaika, Alexander N. and Molodtsova, Olga V. and Zakharov, Alexei and Marchenko, Dmitry and Sanchez-Barriga, Jaime and Varykhalov, Andrei and Shvets, Igor V. and Aristov, Victor Yu.},
  issn         = {1998-0124},
  keyword      = {graphene,cubic-SiC(001),STM,ARPES,LEEM,LEED},
  language     = {eng},
  number       = {8},
  pages        = {562--570},
  publisher    = {Springer},
  series       = {Nano Reseach},
  title        = {Continuous wafer-scale graphene on cubic-SiC(001)},
  url          = {http://dx.doi.org/10.1007/s12274-013-0331-9},
  volume       = {6},
  year         = {2013},
}