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Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations

Laukkanen, P ; Punkkinen, M. P. J. ; Lahti, A. ; Puustinen, J. ; Tuominen, M ; Hilska, J. ; Mäkelä, J ; Dahl, J. ; Yasir, M. and Kuzmin, M , et al. (2017) In Applied Surface Science 396. p.688-694
Abstract

Epitaxial Bi-containing III–V crystals (III-V1-xBix) have attracted increasing interest due to their potential in infrared applications. Atomic-scale characterization and engineering of bulk-like III-V1-xBix properties (e.g., Bi incorporation and defect formation) are challenging but relevant to develop applications. Toward that target, we report here that the traditional surface-science measurement of photoelectron spectroscopy (PES) is a potential, non-destructive method to be combined in the studies of bulk-like properties, when surface effects are properly removed. We have investigated epitaxial GaAs1-xBix films, capped by epitaxial AlAs layers, with high-resolution... (More)

Epitaxial Bi-containing III–V crystals (III-V1-xBix) have attracted increasing interest due to their potential in infrared applications. Atomic-scale characterization and engineering of bulk-like III-V1-xBix properties (e.g., Bi incorporation and defect formation) are challenging but relevant to develop applications. Toward that target, we report here that the traditional surface-science measurement of photoelectron spectroscopy (PES) is a potential, non-destructive method to be combined in the studies of bulk-like properties, when surface effects are properly removed. We have investigated epitaxial GaAs1-xBix films, capped by epitaxial AlAs layers, with high-resolution photoelectron spectroscopy. The Bi5d core-level spectra of GaAs1-xBix together with ab-initio calculations give direct evidence of variation of Bi bonding environment in the lattice sites. The result agrees with photoluminescence (PL) measurement which shows that the studied GaAs1-xBix films include local areas with higher Bi content, which contribute to PL but do not readily appear in x-ray diffraction (XRD). The measured and calculated Bi core-level shifts show also that Ga vacancies and Bi clusters are dominant defects.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
GaAsBi, Photoelectron spectroscopy, Photoluminescence, Synchrotron radiation
in
Applied Surface Science
volume
396
pages
7 pages
publisher
Elsevier
external identifiers
  • scopus:85006814750
  • wos:000396223500085
ISSN
0169-4332
DOI
10.1016/j.apsusc.2016.11.009
language
English
LU publication?
yes
id
6ee67392-4b61-4b8a-afea-70088bad3dcd
date added to LUP
2017-02-03 10:06:18
date last changed
2025-10-14 09:48:38
@article{6ee67392-4b61-4b8a-afea-70088bad3dcd,
  abstract     = {{<p>Epitaxial Bi-containing III–V crystals (III-V<sub>1-x</sub>Bi<sub>x</sub>) have attracted increasing interest due to their potential in infrared applications. Atomic-scale characterization and engineering of bulk-like III-V<sub>1-x</sub>Bi<sub>x</sub> properties (e.g., Bi incorporation and defect formation) are challenging but relevant to develop applications. Toward that target, we report here that the traditional surface-science measurement of photoelectron spectroscopy (PES) is a potential, non-destructive method to be combined in the studies of bulk-like properties, when surface effects are properly removed. We have investigated epitaxial GaAs<sub>1-x</sub>Bi<sub>x</sub> films, capped by epitaxial AlAs layers, with high-resolution photoelectron spectroscopy. The Bi5d core-level spectra of GaAs<sub>1-x</sub>Bi<sub>x</sub> together with ab-initio calculations give direct evidence of variation of Bi bonding environment in the lattice sites. The result agrees with photoluminescence (PL) measurement which shows that the studied GaAs<sub>1-x</sub>Bi<sub>x</sub> films include local areas with higher Bi content, which contribute to PL but do not readily appear in x-ray diffraction (XRD). The measured and calculated Bi core-level shifts show also that Ga vacancies and Bi clusters are dominant defects.</p>}},
  author       = {{Laukkanen, P and Punkkinen, M. P. J. and Lahti, A. and Puustinen, J. and Tuominen, M and Hilska, J. and Mäkelä, J and Dahl, J. and Yasir, M. and Kuzmin, M and Osiecki, J. R. and Schulte, K. and Guina, M. and Kokko, K}},
  issn         = {{0169-4332}},
  keywords     = {{GaAsBi; Photoelectron spectroscopy; Photoluminescence; Synchrotron radiation}},
  language     = {{eng}},
  month        = {{02}},
  pages        = {{688--694}},
  publisher    = {{Elsevier}},
  series       = {{Applied Surface Science}},
  title        = {{Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations}},
  url          = {{http://dx.doi.org/10.1016/j.apsusc.2016.11.009}},
  doi          = {{10.1016/j.apsusc.2016.11.009}},
  volume       = {{396}},
  year         = {{2017}},
}