Metal assisted chemical etching of silicon in the gas phase : A nanofabrication platform for X-ray optics
(2020) In Nanoscale Horizons 5(5). p.869-879- Abstract
High aspect ratio nanostructuring requires high precision pattern transfer with highly directional etching. In this work, we demonstrate the fabrication of structures with ultra-high aspect ratios (up to 10 000 : 1) in the nanoscale regime (down to 10 nm) by platinum assisted chemical etching of silicon in the gas phase. The etching gas is created by a vapour of water diluted hydrofluoric acid and a continuous air flow, which works both as an oxidizer and as a gas carrier for reactive species. The high reactivity of platinum as a catalyst and the formation of platinum silicide to improve the stability of the catalyst pattern allow a controlled etching. The method has been successfully applied to produce straight nanowires with section... (More)
High aspect ratio nanostructuring requires high precision pattern transfer with highly directional etching. In this work, we demonstrate the fabrication of structures with ultra-high aspect ratios (up to 10 000 : 1) in the nanoscale regime (down to 10 nm) by platinum assisted chemical etching of silicon in the gas phase. The etching gas is created by a vapour of water diluted hydrofluoric acid and a continuous air flow, which works both as an oxidizer and as a gas carrier for reactive species. The high reactivity of platinum as a catalyst and the formation of platinum silicide to improve the stability of the catalyst pattern allow a controlled etching. The method has been successfully applied to produce straight nanowires with section size in the range of 10-100 nm and length of hundreds of micrometres, and X-ray optical elements with feature sizes down to 10 nm and etching depth in the range of tens of micrometres. This work opens the possibility of a low cost etching method for stiction-sensitive nanostructures and a large range of applications where silicon high aspect ratio nanostructures and high precision of pattern transfer are required.
(Less)
- author
- Romano, Lucia ; Kagias, Matias LU ; Vila-Comamala, Joan ; Jefimovs, Konstantins ; Tseng, Li Ting ; Guzenko, Vitaliy A. and Stampanoni, Marco
- publishing date
- 2020-05
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanoscale Horizons
- volume
- 5
- issue
- 5
- pages
- 11 pages
- publisher
- Royal Society of Chemistry
- external identifiers
-
- pmid:32100775
- scopus:85084961277
- ISSN
- 2055-6756
- DOI
- 10.1039/c9nh00709a
- language
- English
- LU publication?
- no
- additional info
- Publisher Copyright: © 2020 The Royal Society of Chemistry.
- id
- 6f923803-1b19-4c1a-9000-ee31edc78d0e
- date added to LUP
- 2023-11-27 08:59:13
- date last changed
- 2024-04-24 12:37:05
@article{6f923803-1b19-4c1a-9000-ee31edc78d0e,
abstract = {{<p>High aspect ratio nanostructuring requires high precision pattern transfer with highly directional etching. In this work, we demonstrate the fabrication of structures with ultra-high aspect ratios (up to 10 000 : 1) in the nanoscale regime (down to 10 nm) by platinum assisted chemical etching of silicon in the gas phase. The etching gas is created by a vapour of water diluted hydrofluoric acid and a continuous air flow, which works both as an oxidizer and as a gas carrier for reactive species. The high reactivity of platinum as a catalyst and the formation of platinum silicide to improve the stability of the catalyst pattern allow a controlled etching. The method has been successfully applied to produce straight nanowires with section size in the range of 10-100 nm and length of hundreds of micrometres, and X-ray optical elements with feature sizes down to 10 nm and etching depth in the range of tens of micrometres. This work opens the possibility of a low cost etching method for stiction-sensitive nanostructures and a large range of applications where silicon high aspect ratio nanostructures and high precision of pattern transfer are required.</p>}},
author = {{Romano, Lucia and Kagias, Matias and Vila-Comamala, Joan and Jefimovs, Konstantins and Tseng, Li Ting and Guzenko, Vitaliy A. and Stampanoni, Marco}},
issn = {{2055-6756}},
language = {{eng}},
number = {{5}},
pages = {{869--879}},
publisher = {{Royal Society of Chemistry}},
series = {{Nanoscale Horizons}},
title = {{Metal assisted chemical etching of silicon in the gas phase : A nanofabrication platform for X-ray optics}},
url = {{http://dx.doi.org/10.1039/c9nh00709a}},
doi = {{10.1039/c9nh00709a}},
volume = {{5}},
year = {{2020}},
}