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Wideband SAW-Less Receiver Front-End with Harmonic Rejection Mixer in 65-nm CMOS

ud Din, Imad; Wernehag, Johan LU ; Andersson, Stefan; Mattisson, Sven LU and Sjöland, Henrik LU (2013) In IEEE Transactions on Circuits and Systems - II - Express Briefs 60(5). p.242-246
Abstract
A wideband direct-conversion receiver front-end featuring a new harmonic rejection technique is demonstrated in 65-nm CMOS. The circuit consists of a two-stage low-noise amplifier, the first stage with capacitive feedback, a harmonic rejection mixer using 25% and 50% duty cycle local oscillator signals, and a third-order channel-select filter with configurable bandwidth. The receiver front-end is intended for surface-acoustic-wave-less cellular applications, and its performance was measured at 900- and 1800-MHz bands. The average harmonic rejection over GSM and LTE channel bandwidths is between 60 and 70 dB. Peak harmonic rejection exceeds 80 dB. The noise figures (NFs) are 3.3 and 3.9 dB for the complete receiver front-end in low band and... (More)
A wideband direct-conversion receiver front-end featuring a new harmonic rejection technique is demonstrated in 65-nm CMOS. The circuit consists of a two-stage low-noise amplifier, the first stage with capacitive feedback, a harmonic rejection mixer using 25% and 50% duty cycle local oscillator signals, and a third-order channel-select filter with configurable bandwidth. The receiver front-end is intended for surface-acoustic-wave-less cellular applications, and its performance was measured at 900- and 1800-MHz bands. The average harmonic rejection over GSM and LTE channel bandwidths is between 60 and 70 dB. Peak harmonic rejection exceeds 80 dB. The noise figures (NFs) are 3.3 and 3.9 dB for the complete receiver front-end in low band and high band, respectively, with an S11 below -15 dB from 500 MHz to 2.5 GHz. The 1-dB received signal compression points with a blocker present at 20/80 MHz offset for low/high band are 0 and +2 dBm, respectively. The NF with 0-dBm blocker is 13 dB. For low band, the in-band IIP3 and IIP2 are -14.8 and > 49 dBm, respectively, and, for high band, -18.2 and > 44 dBm. The circuit worst case consumes 80 mW of power. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
IEEE Transactions on Circuits and Systems - II - Express Briefs
volume
60
issue
5
pages
242 - 246
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000319226200002
  • scopus:84877873204
ISSN
1558-3791
DOI
10.1109/TCSII.2013.2251973
language
English
LU publication?
yes
id
70e2325a-7ef4-42dd-bf78-c8fb664837c4 (old id 3972009)
date added to LUP
2013-08-16 13:35:38
date last changed
2019-05-14 01:38:03
@article{70e2325a-7ef4-42dd-bf78-c8fb664837c4,
  abstract     = {A wideband direct-conversion receiver front-end featuring a new harmonic rejection technique is demonstrated in 65-nm CMOS. The circuit consists of a two-stage low-noise amplifier, the first stage with capacitive feedback, a harmonic rejection mixer using 25% and 50% duty cycle local oscillator signals, and a third-order channel-select filter with configurable bandwidth. The receiver front-end is intended for surface-acoustic-wave-less cellular applications, and its performance was measured at 900- and 1800-MHz bands. The average harmonic rejection over GSM and LTE channel bandwidths is between 60 and 70 dB. Peak harmonic rejection exceeds 80 dB. The noise figures (NFs) are 3.3 and 3.9 dB for the complete receiver front-end in low band and high band, respectively, with an S11 below -15 dB from 500 MHz to 2.5 GHz. The 1-dB received signal compression points with a blocker present at 20/80 MHz offset for low/high band are 0 and +2 dBm, respectively. The NF with 0-dBm blocker is 13 dB. For low band, the in-band IIP3 and IIP2 are -14.8 and > 49 dBm, respectively, and, for high band, -18.2 and > 44 dBm. The circuit worst case consumes 80 mW of power.},
  author       = {ud Din, Imad and Wernehag, Johan and Andersson, Stefan and Mattisson, Sven and Sjöland, Henrik},
  issn         = {1558-3791},
  language     = {eng},
  number       = {5},
  pages        = {242--246},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Circuits and Systems - II - Express Briefs},
  title        = {Wideband SAW-Less Receiver Front-End with Harmonic Rejection Mixer in 65-nm CMOS},
  url          = {http://dx.doi.org/10.1109/TCSII.2013.2251973},
  volume       = {60},
  year         = {2013},
}