Leshchenko, E. D.LU; Dubrovskii, V. G. and Johansson, J.LU
(2019)
20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018
In Journal of Physics: Conference Series1199.
Abstract
Despite the great advances in synthesis of III-V ternary nanowires over the past decade, there is a lack of understanding and detailed information about Al 1-x
In x
As nanowire growth. Recently, we have developed an analytical approach for understanding the composition of ternary nanowires nucleating from a quaternary liquid melt. Herein, we use our model to describe the formation of Al ... (More)
Despite the great advances in synthesis of III-V ternary nanowires over the past decade, there is a lack of understanding and detailed information about Al 1-x
In x
As nanowire growth. Recently, we have developed an analytical approach for understanding the composition of ternary nanowires nucleating from a quaternary liquid melt. Herein, we use our model to describe the formation of Al 1-x
In x
As nanowires and tuning their composition within the nucleation-limited regime of nanowire growth via the vapor-liquid-solid mechanism. In particular, we examine the influence of growth temperature and the total concentrations of group III elements on the liquid-solid composition dependence. The obtained results may be useful for Al 1-x
In x
As nanowire growth.
20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics 26–30 November 2018, St. Petersburg, Russian Federation
series title
Journal of Physics: Conference Series
volume
1199
article number
012022
conference name
20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018
@inproceedings{724f99c9-8afd-4131-b3ea-4e8889c4253d,
abstract = {{<p><br>
Despite the great advances in synthesis of III-V ternary nanowires over the past decade, there is a lack of understanding and detailed information about Al <br>
<sub>1-x</sub><br>
In <br>
<sub>x</sub><br>
As nanowire growth. Recently, we have developed an analytical approach for understanding the composition of ternary nanowires nucleating from a quaternary liquid melt. Herein, we use our model to describe the formation of Al <br>
<sub>1-x</sub><br>
In <br>
<sub>x</sub><br>
As nanowires and tuning their composition within the nucleation-limited regime of nanowire growth via the vapor-liquid-solid mechanism. In particular, we examine the influence of growth temperature and the total concentrations of group III elements on the liquid-solid composition dependence. The obtained results may be useful for Al <br>
<sub>1-x</sub><br>
In <br>
<sub>x</sub><br>
As nanowire growth. <br>
</p>}},
author = {{Leshchenko, E. D. and Dubrovskii, V. G. and Johansson, J.}},
booktitle = {{20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics 26–30 November 2018, St. Petersburg, Russian Federation}},
issn = {{1742-6588}},
language = {{eng}},
series = {{Journal of Physics: Conference Series}},
title = {{Nucleation-limited composition of Al
<sub>1-x</sub>
In
<sub>x</sub>
As nanowires}},
url = {{http://dx.doi.org/10.1088/1742-6596/1199/1/012022}},
doi = {{10.1088/1742-6596/1199/1/012022}},
volume = {{1199}},
year = {{2019}},
}