Direct observation of structural relaxation in amorphous compound semiconductors
(2003) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 206. p.1024-1027- Abstract
- Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. (C) 2003 Elsevier Science B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/308013
- author
- Azevedo, GD ; Glover, Chris LU ; Yu, KM ; Foran, GJ and Ridgway, MC
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- amorphous solids, ion implantation, InAs, EXAFS
- in
- Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
- volume
- 206
- pages
- 1024 - 1027
- publisher
- Elsevier
- external identifiers
-
- wos:000183690500218
- scopus:0037736647
- ISSN
- 0168-583X
- DOI
- 10.1016/S0168-583X(03)00926-1
- language
- English
- LU publication?
- yes
- id
- 72b25fda-af21-4ad0-bff6-59d2b7fbe393 (old id 308013)
- date added to LUP
- 2016-04-01 17:14:40
- date last changed
- 2022-04-23 03:41:44
@article{72b25fda-af21-4ad0-bff6-59d2b7fbe393, abstract = {{Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. (C) 2003 Elsevier Science B.V. All rights reserved.}}, author = {{Azevedo, GD and Glover, Chris and Yu, KM and Foran, GJ and Ridgway, MC}}, issn = {{0168-583X}}, keywords = {{amorphous solids; ion implantation; InAs; EXAFS}}, language = {{eng}}, pages = {{1024--1027}}, publisher = {{Elsevier}}, series = {{Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms}}, title = {{Direct observation of structural relaxation in amorphous compound semiconductors}}, url = {{http://dx.doi.org/10.1016/S0168-583X(03)00926-1}}, doi = {{10.1016/S0168-583X(03)00926-1}}, volume = {{206}}, year = {{2003}}, }