Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations
(2011) In Physical Review B (Condensed Matter and Materials Physics) 83(24).- Abstract
- We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1985221
- author
- Ahola-Tuomi, M. ; Punkkinen, M. P. J. ; Laukkanen, P. ; Kuzmin, M. ; Lang, J. ; Schulte, Karina LU ; Pietzsch, Annette LU ; Perala, R. E. ; Rasanen, N. and Vayrynen, I. J.
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 83
- issue
- 24
- publisher
- American Physical Society
- external identifiers
-
- wos:000291398500002
- scopus:79961240954
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.83.245401
- language
- English
- LU publication?
- yes
- id
- 737c4602-c3d8-4862-980e-0a17b66022f1 (old id 1985221)
- date added to LUP
- 2016-04-01 15:00:03
- date last changed
- 2022-01-28 03:32:10
@article{737c4602-c3d8-4862-980e-0a17b66022f1, abstract = {{We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.}}, author = {{Ahola-Tuomi, M. and Punkkinen, M. P. J. and Laukkanen, P. and Kuzmin, M. and Lang, J. and Schulte, Karina and Pietzsch, Annette and Perala, R. E. and Rasanen, N. and Vayrynen, I. J.}}, issn = {{1098-0121}}, language = {{eng}}, number = {{24}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations}}, url = {{http://dx.doi.org/10.1103/PhysRevB.83.245401}}, doi = {{10.1103/PhysRevB.83.245401}}, volume = {{83}}, year = {{2011}}, }