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Growth and oxidization stability of cubic Zr1-xGdxN solid solution thin films

Höglund, Carina LU ; Alling, B. ; Jensen, J. ; Hultman, L. ; Birch, J. and Hall-Wilton, Richard LU (2015) In Applied Physics Reviews 117(19).
Abstract
We report Zr1-xGdxN thin films deposited by magnetron sputter deposition. We show a solid solubility of the highly neutron absorbing GdN into ZrN along the whole compositional range, which is in excellent agreement with our recent predictions by first-principles calculations. An oxidization study in air shows that Zr1-xGdxN with x reaching from 1 to close to 0 fully oxidizes, but that the oxidization is slowed down by an increased amount of ZrN or stopped by applying a capping layer of ZrN. The crystalline quality of Zr0.5Gd0.5N films increases with substrate temperatures increasing from 100 degrees C to 900 degrees C. (C) 2015 Author(s).
Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
117
issue
19
article number
195301
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000355005600031
  • scopus:84929650078
ISSN
1931-9401
DOI
10.1063/1.4921167
language
English
LU publication?
yes
id
2cc17443-701c-4aaf-9468-1648dbb6af45 (old id 7411658)
date added to LUP
2016-04-01 10:40:00
date last changed
2023-04-30 04:02:39
@article{2cc17443-701c-4aaf-9468-1648dbb6af45,
  abstract     = {{We report Zr1-xGdxN thin films deposited by magnetron sputter deposition. We show a solid solubility of the highly neutron absorbing GdN into ZrN along the whole compositional range, which is in excellent agreement with our recent predictions by first-principles calculations. An oxidization study in air shows that Zr1-xGdxN with x reaching from 1 to close to 0 fully oxidizes, but that the oxidization is slowed down by an increased amount of ZrN or stopped by applying a capping layer of ZrN. The crystalline quality of Zr0.5Gd0.5N films increases with substrate temperatures increasing from 100 degrees C to 900 degrees C. (C) 2015 Author(s).}},
  author       = {{Höglund, Carina and Alling, B. and Jensen, J. and Hultman, L. and Birch, J. and Hall-Wilton, Richard}},
  issn         = {{1931-9401}},
  language     = {{eng}},
  number       = {{19}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Reviews}},
  title        = {{Growth and oxidization stability of cubic Zr1-xGdxN solid solution thin films}},
  url          = {{http://dx.doi.org/10.1063/1.4921167}},
  doi          = {{10.1063/1.4921167}},
  volume       = {{117}},
  year         = {{2015}},
}