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Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxy

Wang, L. B.; Guo, J. K.; Kang, N.; Pan, Dong; Li, Sen; Fan, Dingxun; Zhao, Jianhua and Xu, Hongqi LU (2015) In Applied Physics Letters 106(17).
Abstract
We report low-temperature magnetotransport studies of individual InAs nanowires grown by molecule beam epitaxy. At low magnetic fields, the magnetoconductance characteristics exhibit a crossover between weak antilocalization and weak localization by changing either the gate voltage or the temperature. The observed crossover behavior can be well described in terms of relative scales of the transport characteristic lengths extracted based on the quasi-one-dimensional theory of weak localization in the presence of spin-orbit interaction. The spin relaxation length extracted from the magnetoconductance data is found to be in the range of 80-100 nm, indicating the presence of strong spin-orbit coupling in the InAs nanowires. Moreover, the... (More)
We report low-temperature magnetotransport studies of individual InAs nanowires grown by molecule beam epitaxy. At low magnetic fields, the magnetoconductance characteristics exhibit a crossover between weak antilocalization and weak localization by changing either the gate voltage or the temperature. The observed crossover behavior can be well described in terms of relative scales of the transport characteristic lengths extracted based on the quasi-one-dimensional theory of weak localization in the presence of spin-orbit interaction. The spin relaxation length extracted from the magnetoconductance data is found to be in the range of 80-100 nm, indicating the presence of strong spin-orbit coupling in the InAs nanowires. Moreover, the amplitude of universal conductance fluctuations in the nanowires is found to be suppressed at low temperatures due to the presence of strong spin-orbit scattering. (C) 2015 AIP Publishing LLC. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
106
issue
17
publisher
American Institute of Physics
external identifiers
  • wos:000353839100048
  • scopus:84929497908
ISSN
0003-6951
DOI
10.1063/1.4919390
language
English
LU publication?
yes
id
ff86dde9-51c4-41e5-b98c-05328bd62263 (old id 7438975)
date added to LUP
2015-06-24 07:54:16
date last changed
2017-09-10 03:21:27
@article{ff86dde9-51c4-41e5-b98c-05328bd62263,
  abstract     = {We report low-temperature magnetotransport studies of individual InAs nanowires grown by molecule beam epitaxy. At low magnetic fields, the magnetoconductance characteristics exhibit a crossover between weak antilocalization and weak localization by changing either the gate voltage or the temperature. The observed crossover behavior can be well described in terms of relative scales of the transport characteristic lengths extracted based on the quasi-one-dimensional theory of weak localization in the presence of spin-orbit interaction. The spin relaxation length extracted from the magnetoconductance data is found to be in the range of 80-100 nm, indicating the presence of strong spin-orbit coupling in the InAs nanowires. Moreover, the amplitude of universal conductance fluctuations in the nanowires is found to be suppressed at low temperatures due to the presence of strong spin-orbit scattering. (C) 2015 AIP Publishing LLC.},
  articleno    = {173105},
  author       = {Wang, L. B. and Guo, J. K. and Kang, N. and Pan, Dong and Li, Sen and Fan, Dingxun and Zhao, Jianhua and Xu, Hongqi},
  issn         = {0003-6951},
  language     = {eng},
  number       = {17},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxy},
  url          = {http://dx.doi.org/10.1063/1.4919390},
  volume       = {106},
  year         = {2015},
}