Characterization of Ambipolar GaSb/InAs Core-Shell Nanowires by Thermovoltage Measurements.
(2015) In ACS Nano 9(7). p.7033-7040- Abstract
- In semiconductor heterostructures with a type II band alignment, such as GaSb-InAs, conduction can be tuned from electron- to hole-dominated using an electrostatic gate. However, traditional conductance measurements give no direct information on the carrier type, and thus limit the ability to distinguish transport effects originating from the two materials. Here, we employ thermovoltage measurements to GaSb/InAs core-shell nanowires, and reliably identify the dominant carrier type at room temperature as well as in the quantum transport regime at 4.2 K, even in cases where the conductance measurement does not allow for such a distinction. In addition, we show that theoretical modeling using the conductance data as input can reproduce the... (More)
- In semiconductor heterostructures with a type II band alignment, such as GaSb-InAs, conduction can be tuned from electron- to hole-dominated using an electrostatic gate. However, traditional conductance measurements give no direct information on the carrier type, and thus limit the ability to distinguish transport effects originating from the two materials. Here, we employ thermovoltage measurements to GaSb/InAs core-shell nanowires, and reliably identify the dominant carrier type at room temperature as well as in the quantum transport regime at 4.2 K, even in cases where the conductance measurement does not allow for such a distinction. In addition, we show that theoretical modeling using the conductance data as input can reproduce the measured thermovoltage under the assumption that electron and hole states shift differently in energy with the applied gate voltage. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/7484571
- author
- Gluschke, Jan-Göran LU ; Leijnse, Martin LU ; Ganjipour, Bahram LU ; Dick Thelander, Kimberly LU ; Linke, Heiner LU and Thelander, Claes LU
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- ACS Nano
- volume
- 9
- issue
- 7
- pages
- 7033 - 7040
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:26090774
- wos:000358823200040
- scopus:84938151027
- pmid:26090774
- ISSN
- 1936-086X
- DOI
- 10.1021/acsnano.5b01495
- language
- English
- LU publication?
- yes
- id
- 11cd378d-b676-4682-8ef4-db72b686e612 (old id 7484571)
- date added to LUP
- 2016-04-01 10:06:17
- date last changed
- 2023-11-09 11:59:28
@article{11cd378d-b676-4682-8ef4-db72b686e612, abstract = {{In semiconductor heterostructures with a type II band alignment, such as GaSb-InAs, conduction can be tuned from electron- to hole-dominated using an electrostatic gate. However, traditional conductance measurements give no direct information on the carrier type, and thus limit the ability to distinguish transport effects originating from the two materials. Here, we employ thermovoltage measurements to GaSb/InAs core-shell nanowires, and reliably identify the dominant carrier type at room temperature as well as in the quantum transport regime at 4.2 K, even in cases where the conductance measurement does not allow for such a distinction. In addition, we show that theoretical modeling using the conductance data as input can reproduce the measured thermovoltage under the assumption that electron and hole states shift differently in energy with the applied gate voltage.}}, author = {{Gluschke, Jan-Göran and Leijnse, Martin and Ganjipour, Bahram and Dick Thelander, Kimberly and Linke, Heiner and Thelander, Claes}}, issn = {{1936-086X}}, language = {{eng}}, number = {{7}}, pages = {{7033--7040}}, publisher = {{The American Chemical Society (ACS)}}, series = {{ACS Nano}}, title = {{Characterization of Ambipolar GaSb/InAs Core-Shell Nanowires by Thermovoltage Measurements.}}, url = {{http://dx.doi.org/10.1021/acsnano.5b01495}}, doi = {{10.1021/acsnano.5b01495}}, volume = {{9}}, year = {{2015}}, }