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Characterization of Ambipolar GaSb/InAs Core-Shell Nanowires by Thermovoltage Measurements.

Gluschke, Jan-Göran LU ; Leijnse, Martin LU ; Ganjipour, Bahram LU ; Dick Thelander, Kimberly LU ; Linke, Heiner LU and Thelander, Claes LU (2015) In ACS Nano 9(7). p.7033-7040
Abstract
In semiconductor heterostructures with a type II band alignment, such as GaSb-InAs, conduction can be tuned from electron- to hole-dominated using an electrostatic gate. However, traditional conductance measurements give no direct information on the carrier type, and thus limit the ability to distinguish transport effects originating from the two materials. Here, we employ thermovoltage measurements to GaSb/InAs core-shell nanowires, and reliably identify the dominant carrier type at room temperature as well as in the quantum transport regime at 4.2 K, even in cases where the conductance measurement does not allow for such a distinction. In addition, we show that theoretical modeling using the conductance data as input can reproduce the... (More)
In semiconductor heterostructures with a type II band alignment, such as GaSb-InAs, conduction can be tuned from electron- to hole-dominated using an electrostatic gate. However, traditional conductance measurements give no direct information on the carrier type, and thus limit the ability to distinguish transport effects originating from the two materials. Here, we employ thermovoltage measurements to GaSb/InAs core-shell nanowires, and reliably identify the dominant carrier type at room temperature as well as in the quantum transport regime at 4.2 K, even in cases where the conductance measurement does not allow for such a distinction. In addition, we show that theoretical modeling using the conductance data as input can reproduce the measured thermovoltage under the assumption that electron and hole states shift differently in energy with the applied gate voltage. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
ACS Nano
volume
9
issue
7
pages
7033 - 7040
publisher
The American Chemical Society
external identifiers
  • pmid:26090774
  • wos:000358823200040
  • scopus:84938151027
ISSN
1936-086X
DOI
10.1021/acsnano.5b01495
language
English
LU publication?
yes
id
11cd378d-b676-4682-8ef4-db72b686e612 (old id 7484571)
date added to LUP
2015-08-06 16:33:18
date last changed
2017-08-20 03:06:12
@article{11cd378d-b676-4682-8ef4-db72b686e612,
  abstract     = {In semiconductor heterostructures with a type II band alignment, such as GaSb-InAs, conduction can be tuned from electron- to hole-dominated using an electrostatic gate. However, traditional conductance measurements give no direct information on the carrier type, and thus limit the ability to distinguish transport effects originating from the two materials. Here, we employ thermovoltage measurements to GaSb/InAs core-shell nanowires, and reliably identify the dominant carrier type at room temperature as well as in the quantum transport regime at 4.2 K, even in cases where the conductance measurement does not allow for such a distinction. In addition, we show that theoretical modeling using the conductance data as input can reproduce the measured thermovoltage under the assumption that electron and hole states shift differently in energy with the applied gate voltage.},
  author       = {Gluschke, Jan-Göran and Leijnse, Martin and Ganjipour, Bahram and Dick Thelander, Kimberly and Linke, Heiner and Thelander, Claes},
  issn         = {1936-086X},
  language     = {eng},
  number       = {7},
  pages        = {7033--7040},
  publisher    = {The American Chemical Society},
  series       = {ACS Nano},
  title        = {Characterization of Ambipolar GaSb/InAs Core-Shell Nanowires by Thermovoltage Measurements.},
  url          = {http://dx.doi.org/10.1021/acsnano.5b01495},
  volume       = {9},
  year         = {2015},
}