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Sn-Seeded GaAs Nanowires as Self-Assembled Radial p-n Junctions

Sun, Rong LU ; Jacobsson, Daniel LU ; Chen, I-Ju LU ; Nilsson, Malin LU ; Thelander, Claes LU ; Lehmann, Sebastian LU and Dick Thelander, Kimberly LU (2015) In Nano Letters 15(6). p.3757-3762
Abstract
The widespread use of Au as a seed particle in the fabrication of semiconductor nanowires presents a fundamental limitation to the potential incorporation of such nanostructures into electronic devices. Although several other growth techniques have been demonstrated, the use of alternative seed particle metals remains an underexplored but potentially very promising way to influence the properties of the resulting nanowires while simultaneously avoiding gold. In this Letter, we demonstrate the use of Sn as a seed particle metal for GaAs nanowires grown by metal-organic vapor phase epitaxy. We show that vertically aligned and stacking defect-free GaAs nanowires can be grown with very high yield. The resulting nanowires exhibit Esaki diode... (More)
The widespread use of Au as a seed particle in the fabrication of semiconductor nanowires presents a fundamental limitation to the potential incorporation of such nanostructures into electronic devices. Although several other growth techniques have been demonstrated, the use of alternative seed particle metals remains an underexplored but potentially very promising way to influence the properties of the resulting nanowires while simultaneously avoiding gold. In this Letter, we demonstrate the use of Sn as a seed particle metal for GaAs nanowires grown by metal-organic vapor phase epitaxy. We show that vertically aligned and stacking defect-free GaAs nanowires can be grown with very high yield. The resulting nanowires exhibit Esaki diode behavior, attributed to very high n-doping of the nanowire core with Sn, and simultaneous C-doping of the radial overgrowth. These results demonstrate that the use of alternative seed particle metals is a potentially important area to explore for developing nanowire materials with controlled material properties. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanowires, III-V semiconductors, vapor-phase epitaxy, GaAs, transmission, electron microscopy, doping p-n junction
in
Nano Letters
volume
15
issue
6
pages
3757 - 3762
publisher
The American Chemical Society
external identifiers
  • wos:000356316900016
  • scopus:84935893866
ISSN
1530-6992
DOI
10.1021/acs.nanolett.5b00276
language
English
LU publication?
yes
id
d69ccb79-d2ab-4256-bd10-1ba7a2bcb309 (old id 7601787)
date added to LUP
2015-07-23 14:05:31
date last changed
2017-10-01 04:21:57
@article{d69ccb79-d2ab-4256-bd10-1ba7a2bcb309,
  abstract     = {The widespread use of Au as a seed particle in the fabrication of semiconductor nanowires presents a fundamental limitation to the potential incorporation of such nanostructures into electronic devices. Although several other growth techniques have been demonstrated, the use of alternative seed particle metals remains an underexplored but potentially very promising way to influence the properties of the resulting nanowires while simultaneously avoiding gold. In this Letter, we demonstrate the use of Sn as a seed particle metal for GaAs nanowires grown by metal-organic vapor phase epitaxy. We show that vertically aligned and stacking defect-free GaAs nanowires can be grown with very high yield. The resulting nanowires exhibit Esaki diode behavior, attributed to very high n-doping of the nanowire core with Sn, and simultaneous C-doping of the radial overgrowth. These results demonstrate that the use of alternative seed particle metals is a potentially important area to explore for developing nanowire materials with controlled material properties.},
  author       = {Sun, Rong and Jacobsson, Daniel and Chen, I-Ju and Nilsson, Malin and Thelander, Claes and Lehmann, Sebastian and Dick Thelander, Kimberly},
  issn         = {1530-6992},
  keyword      = {Nanowires,III-V semiconductors,vapor-phase epitaxy,GaAs,transmission,electron microscopy,doping p-n junction},
  language     = {eng},
  number       = {6},
  pages        = {3757--3762},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Sn-Seeded GaAs Nanowires as Self-Assembled Radial p-n Junctions},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.5b00276},
  volume       = {15},
  year         = {2015},
}