Diameter-dependent growth rate of InAs nanowires
Fröberg, Linus LU ; Seifert, Werner LU and Johansson, Jonas LU
(2007)
In Physical Review B. Condensed Matter and Materials Physics
76.
- Abstract
- We have grown Au seeded InAs nanowires using chemical beam epitaxy and report on the growth rate
dependence on nanowire diameter. We find a maximum of the growth rate at a nanowire diameter of 25 nm,
below which the growth rate decreases due to the Gibbs-Thomson effect. Above the maximum, the growth rate
decreases with increasing diameter due to the effect of material diffusion to the growth point. A unified model,
which accounts for both the Gibbs-Thomson effect and material diffusion, is presented and successfully
compared to the experiments. From the comparison, we extract the diffusion length on the substrate surface
and a critical diameter, below which nanowire growth ceases, and... (More) - We have grown Au seeded InAs nanowires using chemical beam epitaxy and report on the growth rate
dependence on nanowire diameter. We find a maximum of the growth rate at a nanowire diameter of 25 nm,
below which the growth rate decreases due to the Gibbs-Thomson effect. Above the maximum, the growth rate
decreases with increasing diameter due to the effect of material diffusion to the growth point. A unified model,
which accounts for both the Gibbs-Thomson effect and material diffusion, is presented and successfully
compared to the experiments. From the comparison, we extract the diffusion length on the substrate surface
and a critical diameter, below which nanowire growth ceases, and show that these physical parameters can be
tuned by controlling the supersaturation. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/763979
- author
- Fröberg, Linus
LU
; Seifert, Werner
LU
and Johansson, Jonas
LU
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B. Condensed Matter and Materials Physics
- volume
- 76
- article number
- 153401
- publisher
- American Physical Society
- external identifiers
-
- wos:000250620400023
- DOI
- 10.1103/PhysRevB.76.153401
- language
- English
- LU publication?
- yes
- id
- 5eb1c155-b571-4f1c-92ae-a5e2f8a4e582 (old id 763979)
- date added to LUP
- 2016-04-04 13:06:43
- date last changed
- 2018-11-21 21:12:14
@article{5eb1c155-b571-4f1c-92ae-a5e2f8a4e582,
abstract = {{We have grown Au seeded InAs nanowires using chemical beam epitaxy and report on the growth rate<br/><br>
dependence on nanowire diameter. We find a maximum of the growth rate at a nanowire diameter of 25 nm,<br/><br>
below which the growth rate decreases due to the Gibbs-Thomson effect. Above the maximum, the growth rate<br/><br>
decreases with increasing diameter due to the effect of material diffusion to the growth point. A unified model,<br/><br>
which accounts for both the Gibbs-Thomson effect and material diffusion, is presented and successfully<br/><br>
compared to the experiments. From the comparison, we extract the diffusion length on the substrate surface<br/><br>
and a critical diameter, below which nanowire growth ceases, and show that these physical parameters can be<br/><br>
tuned by controlling the supersaturation.}},
author = {{Fröberg, Linus and Seifert, Werner and Johansson, Jonas}},
language = {{eng}},
publisher = {{American Physical Society}},
series = {{Physical Review B. Condensed Matter and Materials Physics}},
title = {{Diameter-dependent growth rate of InAs nanowires}},
url = {{http://dx.doi.org/10.1103/PhysRevB.76.153401}},
doi = {{10.1103/PhysRevB.76.153401}},
volume = {{76}},
year = {{2007}},
}