Investigation of polymethylmethacrylate resist residues using photoelectron microscopy
(2002) 20th North American Conference on Molecular Beam Epitaxy 20(3). p.1139-1142- Abstract
- Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/334766
- author
- Maximov, Ivan LU ; Zakharov, AA ; Holmqvist, Tommy LU ; Montelius, Lars LU and Lindau, Ingolf LU
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- volume
- 20
- issue
- 3
- pages
- 1139 - 1142
- publisher
- American Institute of Physics (AIP)
- conference name
- 20th North American Conference on Molecular Beam Epitaxy
- conference dates
- 2001-10-01 - 2001-10-03
- external identifiers
-
- wos:000176358300061
- scopus:0035998552
- ISSN
- 1071-1023
- 1520-8567
- DOI
- 10.1116/1.1470509
- language
- English
- LU publication?
- yes
- id
- 7738bcdf-8fa1-4928-a064-edd73d860233 (old id 334766)
- date added to LUP
- 2016-04-01 12:03:19
- date last changed
- 2024-04-08 23:30:38
@inproceedings{7738bcdf-8fa1-4928-a064-edd73d860233, abstract = {{Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.}}, author = {{Maximov, Ivan and Zakharov, AA and Holmqvist, Tommy and Montelius, Lars and Lindau, Ingolf}}, booktitle = {{Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures}}, issn = {{1071-1023}}, language = {{eng}}, number = {{3}}, pages = {{1139--1142}}, publisher = {{American Institute of Physics (AIP)}}, title = {{Investigation of polymethylmethacrylate resist residues using photoelectron microscopy}}, url = {{http://dx.doi.org/10.1116/1.1470509}}, doi = {{10.1116/1.1470509}}, volume = {{20}}, year = {{2002}}, }