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Radiation tolerance of ultra-thin PIN silicon detectors evaluated with a MeV proton microbeam

Salim, Naseem LU ; Pallon, Jan LU ; Elfman, Mikael LU ; Kristiansson, Per LU ; Nilsson, Charlotta LU and Ros, Linus LU (2015) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 356. p.17-21
Abstract
A focused MeV proton beam at the Lund Ion Beam Analysis Facility has been used to induce radiation damage in transmission semiconductor detectors. The damage alters the response of detectors and degrades their charge transport properties. In this work, the radiation tolerance of ultra-thin silicon PIN detectors was studied as a function of proton fluences and detector thickness using a scanning proton microprobe. The investigated detectors had thicknesses ranging between 6.5 and 22 mu m, and different selected regions of each detector were irradiated with fluence up to 2 x 10(15) protons/cm(2). The results show that the charge collection efficiency (CCE) decreases as a function of the proton fluence. Compared with non-irradiated regions,... (More)
A focused MeV proton beam at the Lund Ion Beam Analysis Facility has been used to induce radiation damage in transmission semiconductor detectors. The damage alters the response of detectors and degrades their charge transport properties. In this work, the radiation tolerance of ultra-thin silicon PIN detectors was studied as a function of proton fluences and detector thickness using a scanning proton microprobe. The investigated detectors had thicknesses ranging between 6.5 and 22 mu m, and different selected regions of each detector were irradiated with fluence up to 2 x 10(15) protons/cm(2). The results show that the charge collection efficiency (CCE) decreases as a function of the proton fluence. Compared with non-irradiated regions, the CCE was above 94% at the lowest fluence of 2 x 10(12) protons/cm(2) for all the detectors studied. Degradation of the devices caused spectral peak shifting toward lower energies. The highest possible fluence of 2.55 MeV protons that could be used, causing only minor radiation damage, was 2 x 10(13) cm(-2) for the thinnest detectors (6.5 and 10 mu m) and 2 x 10(12) cm(-2) for the thickest detectors (15 and 22 mu m). (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
keywords
Ultra-thin detectors, Silicon detectors, Radiation damage, Charge, collection efficiency, Microbeam facility
in
Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
volume
356
pages
17 - 21
publisher
Elsevier
external identifiers
  • wos:000356990400004
  • scopus:84929193553
ISSN
0168-583X
DOI
10.1016/j.nimb.2015.04.016
language
English
LU publication?
yes
id
e4747c8a-65c7-4088-94b4-cb735972130d (old id 7791022)
date added to LUP
2015-09-02 11:17:09
date last changed
2017-01-01 05:56:33
@article{e4747c8a-65c7-4088-94b4-cb735972130d,
  abstract     = {A focused MeV proton beam at the Lund Ion Beam Analysis Facility has been used to induce radiation damage in transmission semiconductor detectors. The damage alters the response of detectors and degrades their charge transport properties. In this work, the radiation tolerance of ultra-thin silicon PIN detectors was studied as a function of proton fluences and detector thickness using a scanning proton microprobe. The investigated detectors had thicknesses ranging between 6.5 and 22 mu m, and different selected regions of each detector were irradiated with fluence up to 2 x 10(15) protons/cm(2). The results show that the charge collection efficiency (CCE) decreases as a function of the proton fluence. Compared with non-irradiated regions, the CCE was above 94% at the lowest fluence of 2 x 10(12) protons/cm(2) for all the detectors studied. Degradation of the devices caused spectral peak shifting toward lower energies. The highest possible fluence of 2.55 MeV protons that could be used, causing only minor radiation damage, was 2 x 10(13) cm(-2) for the thinnest detectors (6.5 and 10 mu m) and 2 x 10(12) cm(-2) for the thickest detectors (15 and 22 mu m).},
  author       = {Salim, Naseem and Pallon, Jan and Elfman, Mikael and Kristiansson, Per and Nilsson, Charlotta and Ros, Linus},
  issn         = {0168-583X},
  keyword      = {Ultra-thin detectors,Silicon detectors,Radiation damage,Charge,collection efficiency,Microbeam facility},
  language     = {eng},
  pages        = {17--21},
  publisher    = {Elsevier},
  series       = {Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms},
  title        = {Radiation tolerance of ultra-thin PIN silicon detectors evaluated with a MeV proton microbeam},
  url          = {http://dx.doi.org/10.1016/j.nimb.2015.04.016},
  volume       = {356},
  year         = {2015},
}