Xe irradiation of graphene on Ir(111): From trapping to blistering
(2015) In Physical Review B (Condensed Matter and Materials Physics) 92(8).- Abstract
- Using x-ray photoelectron spectroscopy, thermal desorption spectroscopy, and scanning tunneling microscopy, we show that upon keV Xe+ irradiation of graphene on Ir(111), Xe atoms are trapped under the graphene. Upon annealing, aggregation of Xe leads to graphene bulges and blisters. The efficient trapping is an unexpected and remarkable phenomenon given the absence of chemical binding of Xe to Ir and to graphene, the weak interaction of a perfect graphene layer with Ir(111), as well as the substantial damage to graphene due to irradiation. By combining molecular dynamics simulations and density functional theory calculations with our experiments, we uncover the mechanism of trapping. We describe ways to avoid blister formation during... (More)
- Using x-ray photoelectron spectroscopy, thermal desorption spectroscopy, and scanning tunneling microscopy, we show that upon keV Xe+ irradiation of graphene on Ir(111), Xe atoms are trapped under the graphene. Upon annealing, aggregation of Xe leads to graphene bulges and blisters. The efficient trapping is an unexpected and remarkable phenomenon given the absence of chemical binding of Xe to Ir and to graphene, the weak interaction of a perfect graphene layer with Ir(111), as well as the substantial damage to graphene due to irradiation. By combining molecular dynamics simulations and density functional theory calculations with our experiments, we uncover the mechanism of trapping. We describe ways to avoid blister formation during graphene growth, and also demonstrate how ion implantation can be used to intentionally create blisters without introducing damage to the graphene layer. Our approach may provide a pathway to synthesize new materials at a substrate-2D material interface or to enable confined reactions at high pressures and temperatures. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/7972234
- author
- Herbig, Charlotte ; Ahlgren, E. Harriet ; Schroeder, Ulrike A. ; Martinez-Galera, Antonio J. ; Arman, Mohammad A LU ; Kotakoski, Jani ; Knudsen, Jan LU ; Krasheninnikov, Arkady V. and Michely, Thomas
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 92
- issue
- 8
- article number
- 085429
- publisher
- American Physical Society
- external identifiers
-
- wos:000360064300005
- scopus:84941071621
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.92.085429
- language
- English
- LU publication?
- yes
- id
- 01034588-329d-4019-8194-418a363fd5e2 (old id 7972234)
- date added to LUP
- 2016-04-01 14:41:46
- date last changed
- 2022-04-06 20:02:18
@article{01034588-329d-4019-8194-418a363fd5e2, abstract = {{Using x-ray photoelectron spectroscopy, thermal desorption spectroscopy, and scanning tunneling microscopy, we show that upon keV Xe+ irradiation of graphene on Ir(111), Xe atoms are trapped under the graphene. Upon annealing, aggregation of Xe leads to graphene bulges and blisters. The efficient trapping is an unexpected and remarkable phenomenon given the absence of chemical binding of Xe to Ir and to graphene, the weak interaction of a perfect graphene layer with Ir(111), as well as the substantial damage to graphene due to irradiation. By combining molecular dynamics simulations and density functional theory calculations with our experiments, we uncover the mechanism of trapping. We describe ways to avoid blister formation during graphene growth, and also demonstrate how ion implantation can be used to intentionally create blisters without introducing damage to the graphene layer. Our approach may provide a pathway to synthesize new materials at a substrate-2D material interface or to enable confined reactions at high pressures and temperatures.}}, author = {{Herbig, Charlotte and Ahlgren, E. Harriet and Schroeder, Ulrike A. and Martinez-Galera, Antonio J. and Arman, Mohammad A and Kotakoski, Jani and Knudsen, Jan and Krasheninnikov, Arkady V. and Michely, Thomas}}, issn = {{1098-0121}}, language = {{eng}}, number = {{8}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Xe irradiation of graphene on Ir(111): From trapping to blistering}}, url = {{http://dx.doi.org/10.1103/PhysRevB.92.085429}}, doi = {{10.1103/PhysRevB.92.085429}}, volume = {{92}}, year = {{2015}}, }