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Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

Fadil, Ahmed; Ou, Yiyu; Zhan, Teng; Wu, Kaiyu; Suyatin, Dmitry LU ; Lu, Weifang; Petersen, Paul Michael; Liu, Zhiqiang and Ou, Haiyan (2015) In Journal of Nanophotonics 9(1).
Abstract
Surface-patterning technologies have enabled the improvement of currently existing light-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency of green GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars on InGaN/GaN quantum-well LEDs. By etching through the active region, it is possible to improve both the light extraction efficiency and, in addition, the internal quantum efficiency through the effects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed using Raman spectroscopy. We have shown that nanopillar LEDs can be significantly improved by applying a combination of ion-damage curing techniques, including thermal and acidic treatment,... (More)
Surface-patterning technologies have enabled the improvement of currently existing light-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency of green GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars on InGaN/GaN quantum-well LEDs. By etching through the active region, it is possible to improve both the light extraction efficiency and, in addition, the internal quantum efficiency through the effects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed using Raman spectroscopy. We have shown that nanopillar LEDs can be significantly improved by applying a combination of ion-damage curing techniques, including thermal and acidic treatment, and have analyzed their effects using x-ray photoelectron spectroscopy. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE) (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
light-emitting diodes, gallium nitride, nanopillar, damage treatment
in
Journal of Nanophotonics
volume
9
issue
1
publisher
SPIE
external identifiers
  • wos:000359835100001
  • scopus:84938939022
ISSN
1934-2608
DOI
10.1117/1.JNP.9.093062
language
English
LU publication?
yes
id
a497a4c0-46a8-493e-a077-7c3e8e4f7126 (old id 7975497)
date added to LUP
2015-09-24 14:23:47
date last changed
2017-02-12 03:53:44
@article{a497a4c0-46a8-493e-a077-7c3e8e4f7126,
  abstract     = {Surface-patterning technologies have enabled the improvement of currently existing light-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency of green GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars on InGaN/GaN quantum-well LEDs. By etching through the active region, it is possible to improve both the light extraction efficiency and, in addition, the internal quantum efficiency through the effects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed using Raman spectroscopy. We have shown that nanopillar LEDs can be significantly improved by applying a combination of ion-damage curing techniques, including thermal and acidic treatment, and have analyzed their effects using x-ray photoelectron spectroscopy. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)},
  articleno    = {093062},
  author       = {Fadil, Ahmed and Ou, Yiyu and Zhan, Teng and Wu, Kaiyu and Suyatin, Dmitry and Lu, Weifang and Petersen, Paul Michael and Liu, Zhiqiang and Ou, Haiyan},
  issn         = {1934-2608},
  keyword      = {light-emitting diodes,gallium nitride,nanopillar,damage treatment},
  language     = {eng},
  number       = {1},
  publisher    = {SPIE},
  series       = {Journal of Nanophotonics},
  title        = {Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography},
  url          = {http://dx.doi.org/10.1117/1.JNP.9.093062},
  volume       = {9},
  year         = {2015},
}