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Centimeter-long III-Nitride nanowires and continuous-wave pumped lasing enabled by graphically epitaxial lift-off

Dong, Jianqi ; Wang, Baoyu ; Zou, Xianshao LU ; Zhao, Wei ; He, Chenguang ; He, Longfei ; Wang, Qiao ; Chen, Zhitao ; Li, Shuti and Zhang, Kang , et al. (2020) In Nano Energy 78.
Abstract

It remains a big challenge to elongate one-dimensional (1D) semiconductor nanowires (NWs), which can be attractive platforms for miniaturizing and/or integrating macroscopic devices, into centimeter-scale length. Herein, we report the innovative preparation of single-crystalline III-nitride NWs, with unprecedented length above 2 cm and the aspect ratio above 6000, by graphically epitaxial lifting-off (GELO) the epitaxial films on sapphire. The proposed GELO technology involves isotropic dry etching and selectively electrochemical (EC) etching. Reaction kinetics study of the EC etching indicate that two-steps processes are included, which is, to our best knowledge, firstly revealed and experimentally confirmed. Centimeter-long... (More)

It remains a big challenge to elongate one-dimensional (1D) semiconductor nanowires (NWs), which can be attractive platforms for miniaturizing and/or integrating macroscopic devices, into centimeter-scale length. Herein, we report the innovative preparation of single-crystalline III-nitride NWs, with unprecedented length above 2 cm and the aspect ratio above 6000, by graphically epitaxial lifting-off (GELO) the epitaxial films on sapphire. The proposed GELO technology involves isotropic dry etching and selectively electrochemical (EC) etching. Reaction kinetics study of the EC etching indicate that two-steps processes are included, which is, to our best knowledge, firstly revealed and experimentally confirmed. Centimeter-long freestanding NWs, with predesigned structure of homogeneous GaN, p-GaN/(InGaN/GaN)6 quantum-wells/n-GaN (simply InGaN/GaN QWs) and AlGaN/AlN/GaN heterostructure, are successfully obtained and exhibit superior morphological uniformity and robust flexibility. Optical properties of the released InGaN/GaN QW-NWs were well optimized owing to the relieved intrinsic strain. Random lasing behavior was unexpectedly observed by continuous-wave excitation of the individual InGaN/GaN QW-NW, with a low threshold of 232 kW•cm-2. This work represents a low-cost and economic approach to yield structure-engineerable super-long III-nitride NWs, which would promote the development and integration of optoelectronic nanodevices.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Graphically epitaxial lift-off, III-Nitride, Random laser, Reaction kinetics, Ultra-long nanowire
in
Nano Energy
volume
78
article number
105404
publisher
Elsevier
external identifiers
  • scopus:85091327731
ISSN
2211-2855
DOI
10.1016/j.nanoen.2020.105404
language
English
LU publication?
yes
id
7bc1e5c2-5dd1-4470-871c-202f7f34cc99
date added to LUP
2020-10-22 14:41:10
date last changed
2023-11-20 13:02:52
@article{7bc1e5c2-5dd1-4470-871c-202f7f34cc99,
  abstract     = {{<p>It remains a big challenge to elongate one-dimensional (1D) semiconductor nanowires (NWs), which can be attractive platforms for miniaturizing and/or integrating macroscopic devices, into centimeter-scale length. Herein, we report the innovative preparation of single-crystalline III-nitride NWs, with unprecedented length above 2 cm and the aspect ratio above 6000, by graphically epitaxial lifting-off (GELO) the epitaxial films on sapphire. The proposed GELO technology involves isotropic dry etching and selectively electrochemical (EC) etching. Reaction kinetics study of the EC etching indicate that two-steps processes are included, which is, to our best knowledge, firstly revealed and experimentally confirmed. Centimeter-long freestanding NWs, with predesigned structure of homogeneous GaN, p-GaN/(InGaN/GaN)<sub>6</sub> quantum-wells/n-GaN (simply InGaN/GaN QWs) and AlGaN/AlN/GaN heterostructure, are successfully obtained and exhibit superior morphological uniformity and robust flexibility. Optical properties of the released InGaN/GaN QW-NWs were well optimized owing to the relieved intrinsic strain. Random lasing behavior was unexpectedly observed by continuous-wave excitation of the individual InGaN/GaN QW-NW, with a low threshold of 232 kW•cm<sup>-2</sup>. This work represents a low-cost and economic approach to yield structure-engineerable super-long III-nitride NWs, which would promote the development and integration of optoelectronic nanodevices.</p>}},
  author       = {{Dong, Jianqi and Wang, Baoyu and Zou, Xianshao and Zhao, Wei and He, Chenguang and He, Longfei and Wang, Qiao and Chen, Zhitao and Li, Shuti and Zhang, Kang and Wang, Xingfu}},
  issn         = {{2211-2855}},
  keywords     = {{Graphically epitaxial lift-off; III-Nitride; Random laser; Reaction kinetics; Ultra-long nanowire}},
  language     = {{eng}},
  publisher    = {{Elsevier}},
  series       = {{Nano Energy}},
  title        = {{Centimeter-long III-Nitride nanowires and continuous-wave pumped lasing enabled by graphically epitaxial lift-off}},
  url          = {{http://dx.doi.org/10.1016/j.nanoen.2020.105404}},
  doi          = {{10.1016/j.nanoen.2020.105404}},
  volume       = {{78}},
  year         = {{2020}},
}