Periodic Nanoarray of Graphene pn-Junctions on Silicon Carbide Obtained by Hydrogen Intercalation
(2022) In Advanced Functional Materials- Abstract
Graphene pn-junctions offer a rich portfolio of intriguing physical phenomena. They stand as the potential building blocks for a broad spectrum of future technologies, ranging from electronic lenses analogous to metamaterials in optics, to high-performance photodetectors important for a variety of optoelectronic applications. The production of graphene pn-junctions and their precise structuring at the nanoscale remains to be a challenge. In this work, a scalable method for fabricating periodic nanoarrays of graphene pn-junctions on a technologically viable semiconducting SiC substrate is introduced. Via H-intercalation, 1D confined armchair graphene nanoribbons are transformed into a single 2D graphene sheet rolling over 6H-SiC mesa... (More)
Graphene pn-junctions offer a rich portfolio of intriguing physical phenomena. They stand as the potential building blocks for a broad spectrum of future technologies, ranging from electronic lenses analogous to metamaterials in optics, to high-performance photodetectors important for a variety of optoelectronic applications. The production of graphene pn-junctions and their precise structuring at the nanoscale remains to be a challenge. In this work, a scalable method for fabricating periodic nanoarrays of graphene pn-junctions on a technologically viable semiconducting SiC substrate is introduced. Via H-intercalation, 1D confined armchair graphene nanoribbons are transformed into a single 2D graphene sheet rolling over 6H-SiC mesa structures. Due to the different surface terminations of the basal and vicinal SiC planes constituting the mesa structures, different types of charge carriers are locally induced into the graphene layer. Using angle-resolved photoelectron spectroscopy, the electronic band structure of the two graphene regions are selectively measured, finding two symmetrically doped phases with p-type being located on the basal planes and n-type on the facets. The results demonstrate that through a careful structuring of the substrate, combined with H-intercalation, integrated networks of graphene pn-junctions could be engineered at the nanoscale, paving the way for the realization of novel optoelectronic device concepts.
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- author
- organization
- publishing date
- 2022-01-27
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Advanced Functional Materials
- publisher
- Wiley-Blackwell
- external identifiers
-
- scopus:85123689219
- ISSN
- 1616-301X
- DOI
- 10.1002/adfm.202109839
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 2022 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH
- id
- 7d63c768-dd5f-453a-8dfd-b914a8572073
- date added to LUP
- 2022-02-16 14:15:44
- date last changed
- 2022-08-27 00:42:03
@article{7d63c768-dd5f-453a-8dfd-b914a8572073,
abstract = {{<p>Graphene pn-junctions offer a rich portfolio of intriguing physical phenomena. They stand as the potential building blocks for a broad spectrum of future technologies, ranging from electronic lenses analogous to metamaterials in optics, to high-performance photodetectors important for a variety of optoelectronic applications. The production of graphene pn-junctions and their precise structuring at the nanoscale remains to be a challenge. In this work, a scalable method for fabricating periodic nanoarrays of graphene pn-junctions on a technologically viable semiconducting SiC substrate is introduced. Via H-intercalation, 1D confined armchair graphene nanoribbons are transformed into a single 2D graphene sheet rolling over 6H-SiC mesa structures. Due to the different surface terminations of the basal and vicinal SiC planes constituting the mesa structures, different types of charge carriers are locally induced into the graphene layer. Using angle-resolved photoelectron spectroscopy, the electronic band structure of the two graphene regions are selectively measured, finding two symmetrically doped phases with p-type being located on the basal planes and n-type on the facets. The results demonstrate that through a careful structuring of the substrate, combined with H-intercalation, integrated networks of graphene pn-junctions could be engineered at the nanoscale, paving the way for the realization of novel optoelectronic device concepts.</p>}},
author = {{Karakachian, Hrag and Rosenzweig, Philipp and Nguyen, T. T.Nhung and Matta, Bharti and Zakharov, Alexei A. and Yakimova, Rositsa and Balasubramanian, Thiagarajan and Mamiyev, Zamin and Tegenkamp, Christoph and Polley, Craig M. and Starke, Ulrich}},
issn = {{1616-301X}},
language = {{eng}},
month = {{01}},
publisher = {{Wiley-Blackwell}},
series = {{Advanced Functional Materials}},
title = {{Periodic Nanoarray of Graphene pn-Junctions on Silicon Carbide Obtained by Hydrogen Intercalation}},
url = {{http://dx.doi.org/10.1002/adfm.202109839}},
doi = {{10.1002/adfm.202109839}},
year = {{2022}},
}