Room-Temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires
(2014) In Nano Letters 14(2). p.694-698- Abstract
- Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed. The fabricated devices show excellent light response in the infrared optical communication region (1.55 mu m), with an external quantum efficiency of 10(4), a responsivity of 10(3) A/W, and a short response time of 2 ms, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4376418
- author
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Photodetector, near-infrared, Gabs/GaInSb, heterojtinction, nanowires, CVD
- in
- Nano Letters
- volume
- 14
- issue
- 2
- pages
- 694 - 698
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000331343900045
- scopus:84894223264
- ISSN
- 1530-6992
- DOI
- 10.1021/nl403951f
- language
- English
- LU publication?
- yes
- id
- 7e07ee4d-ed3e-44dd-b9b6-4f8b76e0e3b3 (old id 4376418)
- date added to LUP
- 2016-04-01 13:55:20
- date last changed
- 2023-11-12 23:44:59
@article{7e07ee4d-ed3e-44dd-b9b6-4f8b76e0e3b3, abstract = {{Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed. The fabricated devices show excellent light response in the infrared optical communication region (1.55 mu m), with an external quantum efficiency of 10(4), a responsivity of 10(3) A/W, and a short response time of 2 ms, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.}}, author = {{Ma, Liang and Hu, Wei and Zhang, Qinglin and Ren, Pinyun and Zhuang, Xiujuan and Zhou, Hong and Xu, Jinyou and Li, Honglai and Shan, Zhengping and Wang, Xiaoxia and Liao, Lei and Xu, Hongqi and Pan, Anlian}}, issn = {{1530-6992}}, keywords = {{Photodetector; near-infrared; Gabs/GaInSb; heterojtinction; nanowires; CVD}}, language = {{eng}}, number = {{2}}, pages = {{694--698}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Room-Temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires}}, url = {{http://dx.doi.org/10.1021/nl403951f}}, doi = {{10.1021/nl403951f}}, volume = {{14}}, year = {{2014}}, }