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Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

Fan, Dingxun; Li, Sen; Kang, N.; Caroff, Philippe; Wang, L. B.; Huang, Y. Q.; Deng, Mingtang LU ; Yu, Chunlin LU and Xu, Hongqi LU (2015) In Nanoscale 7(36). p.14822-14828
Abstract
We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of similar to 700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Lande g-factors extracted for the quantum... (More)
We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of similar to 700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Lande g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of similar to 300 mu eV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanoscale
volume
7
issue
36
pages
14822 - 14828
publisher
Royal Society of Chemistry
external identifiers
  • wos:000360831100004
  • scopus:84940971175
ISSN
2040-3372
DOI
10.1039/c5nr04273a
language
English
LU publication?
yes
id
a7c14dfa-dc5b-4673-a285-3164558d03aa (old id 8080612)
date added to LUP
2015-10-22 09:56:25
date last changed
2017-06-18 03:00:25
@article{a7c14dfa-dc5b-4673-a285-3164558d03aa,
  abstract     = {We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of similar to 700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Lande g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of similar to 300 mu eV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.},
  author       = {Fan, Dingxun and Li, Sen and Kang, N. and Caroff, Philippe and Wang, L. B. and Huang, Y. Q. and Deng, Mingtang and Yu, Chunlin and Xu, Hongqi},
  issn         = {2040-3372},
  language     = {eng},
  number       = {36},
  pages        = {14822--14828},
  publisher    = {Royal Society of Chemistry},
  series       = {Nanoscale},
  title        = {Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy},
  url          = {http://dx.doi.org/10.1039/c5nr04273a},
  volume       = {7},
  year         = {2015},
}