Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy
(2015) In Nanoscale 7(36). p.14822-14828- Abstract
- We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of similar to 700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Lande g-factors extracted for the quantum... (More)
- We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of similar to 700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Lande g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of similar to 300 mu eV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8080612
- author
- Fan, Dingxun ; Li, Sen ; Kang, N. ; Caroff, Philippe ; Wang, L. B. ; Huang, Y. Q. ; Deng, Mingtang LU ; Yu, Chunlin LU and Xu, Hongqi LU
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanoscale
- volume
- 7
- issue
- 36
- pages
- 7 pages
- publisher
- Royal Society of Chemistry
- external identifiers
-
- wos:000360831100004
- scopus:84940971175
- pmid:26308470
- ISSN
- 2040-3372
- DOI
- 10.1039/c5nr04273a
- language
- English
- LU publication?
- yes
- id
- a7c14dfa-dc5b-4673-a285-3164558d03aa (old id 8080612)
- date added to LUP
- 2016-04-01 09:48:57
- date last changed
- 2023-08-30 10:32:09
@article{a7c14dfa-dc5b-4673-a285-3164558d03aa, abstract = {{We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of similar to 700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Lande g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of similar to 300 mu eV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.}}, author = {{Fan, Dingxun and Li, Sen and Kang, N. and Caroff, Philippe and Wang, L. B. and Huang, Y. Q. and Deng, Mingtang and Yu, Chunlin and Xu, Hongqi}}, issn = {{2040-3372}}, language = {{eng}}, number = {{36}}, pages = {{14822--14828}}, publisher = {{Royal Society of Chemistry}}, series = {{Nanoscale}}, title = {{Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy}}, url = {{http://dx.doi.org/10.1039/c5nr04273a}}, doi = {{10.1039/c5nr04273a}}, volume = {{7}}, year = {{2015}}, }